Electronic properties of fluoroethane compounds except C 2 H 5 F, C 2 H 4 F 2 , CH 3 CF 3 , C 2 H 2 F 4 , and C 2 F 6 have not been reported. On the other hands, the physicochemical properties were reported for the usage as the alternative refrigerants. Dissociation channels in the process plasma for fluoroethane compounds were not fully discussed except 1,1,1,2-C 2 H 2 F 4 . Therefore we have investigated the electronic properties and primarily dissociation channels of fluoroethane compounds in the process plasma in semiconductor manufacturing, using computational chemistry. Positive and negative ionized states were investigated by density functional method and the excited states were investigated by EOMCCSD/aug-cc-pVDZ and TD-SCF CAM-B3LYP/aug-cc-pVDZ. It was generally shown through these investigations that C-C bond scission occurred by excitation and ionization and C-F bond scission occurred by excitation and electron attachment.