Measurement and modeling of self-heating in SOI nMOSFET's

Su, L.T.; Chung, J.E.; Antoniadis, D.A.; Goodson, Kenneth E.; Flik, M. I.

doi:10.1109/16.259622

Cited by 315 publications

(80 citation statements)

References 12 publications

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“…DC operation: Heating is significant in AMLED operation and the photodiode junction temperature T j is affected by the LED power consumption P AMLED according to ∆T j ∝ P AMLED [42,43]. Therefore, the rise in I SC is partly contributed by this T j (see section 4).…”

Section: Heating In the Amled And Thermal Couplingmentioning

confidence: 99%

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Monolithic optical link in silicon-on-insulator CMOS technology

et al. 2017

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Abstract:This work presents a monolithic laterally-coupled wide-spectrum (350 nm < λ < 1270 nm) optical link in a silicon-on-insulator CMOS technology. The link consists of a silicon (Si) light-emitting diode (LED) as the optical source and a Si photodiode (PD) as the detector; both realized by vertical abrupt n + p junctions, separated by a shallow trench isolation composed of silicon dioxide. Medium trench isolation around the devices along with the buried oxide layer provides galvanic isolation. Optical coupling in both avalanche-mode and forward-mode operation of the LED are analyzed for various designs and bias conditions. From both DC and pulsed transient measurements, it is further shown that heating in the avalanche-mode LED leads to a slow thermal coupling to the PD with time constants in the ms range. An integrated heat sink in the same technology leads to a ∼ 6 times reduction in the change in PD junction temperature per unit electrical power dissipated in the avalanche-mode LED. The analysis paves way for wide-spectrum optical links integrated in smart power technologies.

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Section: Heating In the Amled And Thermal Couplingmentioning

confidence: 99%

“…The bandwidth can be characterized by a thermal time constant τ TH = R TH · C TH , where R TH and C TH are the effective thermal resistance and capacitance [42,43] of the AMLED-link-PD system.…”

Section: Heating In the Amled And Thermal Couplingmentioning

confidence: 99%

Monolithic optical link in silicon-on-insulator CMOS technology

et al. 2017

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“…In Eq. (1), the temperature of the device is fixed, but considering the case of ultrathin silicon-on-insulator (SOI) devices, it is clear that the temperature of graphene devices will change during device operation due to the self-heating effect [34]. In general, a very low drain bias or short operation time should be used to avoid temperature-induced device degradation, but no such effort has been reported for a graphene device.…”

Section: Discussionmentioning

confidence: 99%

Issues with the electrical characterization of graphene devices

Lee¹,

Lee²,

Jung³

et al. 2012

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Graphene is an attractive material for device applications, but device characteristics are very unstable because the graphene is very sensitive to environmental factors such as charges nearby the graphene, metal contacts, defects, contaminants and other adsorbates. Since the interactions between graphene and environmental factors affect the electrical characteristics of graphene devices, the interpretation of electrical characteristics as simple as current-voltage curves is non-trivial, despite the common practice of using well known electrical characterization methods that have been used in silicon MOSFET. This paper addresses major obstacles in the electrical characterization of graphene devices and offers countermeasures to improve the accuracy of electrical characterization methods.

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“…Our thermal model may suggest new memristors in contemporary silicon on insulator (SOI) technology where such self heating leads to nonlinear behavior. 16 …”

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confidence: 99%