Measurement of activities in gallium-indium liquid alloys

Macur, George J.; Edwards, Russell K.; Wahlbeck, P. G.

doi:10.1021/j100849a046

Cited by 32 publications

(21 citation statements)

References 1 publication

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“…Klinedinst et al [4] applied the emf method with zirconia solid electrolyte to the Ga-In system for the first time to determine gallium activity. The results are in reasonable agreement with those of other investigators [2][3][4][5][6][7][8][9] with some scatter in the higher gallium concentration range. Macur et al [2] obtained higher values by the multiple Knudsen-cell effusion technique even at higher temperatures than those by Bergman [5] in spite of a similar method.…”

supporting

confidence: 92%

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Activity measurement of liquid Ga‐In‐Te alloys by emf method with stabilized zirconia

Iwao

Yamazaki

Nakano

et al. 2003

Scand Jof Metallurgy

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Electromotive force of galvanic cells with zirconia solid electrolytes was measured to determine the activity of gallium in liquid Ga‐In‐Te alloys in the temperature range of 1000 to 1200 K along 3 psuedobinary lines of (InyTe1−y)‐Ga where y= 0.25, 0.50 and 0.75. The mixture of Ga and Ga2O3 was used as a reference electrode. The activity curves of Ga are very complicated at 1073 K. Isoactivity curves at 1073 K in the ternary Ga‐In‐Te alloys were derived by combining the activity data of Ga‐In and Ga‐Te alloys. Using Darken's equation, 2 binary data of Ga‐In and Ga‐Te and ternary data in this study, ΔGXS at 1073 K were derived. The results were compared with those from 3 model calculations proposed by Toop, Kohler and Chou to show better agreement between the experimental values and those by Toop's and Chou's models.

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supporting

confidence: 92%

“…The activities of gallium in the liquid Ga-In [1][2][3][4][5][6][7][8][9] alloys show moderately positive deviations from Raoult's law. Klinedinst et al [4] applied the emf method with zirconia solid electrolyte to the Ga-In system for the first time to determine gallium activity.…”

mentioning

confidence: 99%

Activity measurement of liquid Ga‐In‐Te alloys by emf method with stabilized zirconia

Iwao

Yamazaki

Nakano

et al. 2003

Scand Jof Metallurgy

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“…Using activity coefficients (MACUR et al 1968) for the elements of the eutectic, theory predicts 1.7 w% indium segregation in our test cell.…”

Section: Discussionmentioning

confidence: 87%

Directional Solidification and Melting of Eutectic GaIn

Koster

1999

Cryst. Res. Technol.

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Eutectic gallium-indium is studied in a horizontal Bridgman furnace geometry. Differential temperature gradients are applied to solidify and melt the alloy while observing in-situ the interface morphology and the chemical segregation in the melt and in the solid as well. Upon cooling, a wedge-type indiumrich mushy zone develops at the cold wall. The melt is initially stirred by convective flow. After solidification starts the roll cell recedes to be replaced by a chemically layered conductive melt that eventually solidifies with rather uniform eutectic structure. Upon re-melting, the morphology of the interface adopts a profile that is predetermined by the original solid structure. Those patterns, as well as the flow, are different from single element solid melting experiments and have yet to be modeled. Under high thermal gradient the convective flow mixes the binary melt and the visualized density pattern eventually becomes that of a homogeneous melt.

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“…From [8] the rate of deposition of In0.3Gao.7P at 800~ is 6.5 x 10 -5 cm3/g-~ and increases to 9 x 10 -5 cm3/g-~ for In0.6Ga0,4P at the same temperature. These rates are in fair agreement with the experimentally observed rates of 5-7.5 x 10 -5 cm3/g-~ at these compositions and temperatures.…”

Section: Rate Of Deposition--the Rate Of Deposition Ofmentioning

confidence: 92%

“…2 are used in conjunction with Eq. [8] to replot the data of Fig. 3 in terms of XGaP and temperature.…”

Section: For 800 ~ 900~mentioning

confidence: 99%