Measurement of barrier height and its controlling parameters in bulk barrier diodes

Triangular barrier diodes (TBD) are multilayer bulk unipolar diodes having n+–i–p++–i–n+ structure where the two intrinsic regions have unequal lengths. The current in the device is due to the thermionic emission of electrons over a barrier formed in the p++ region. In this paper a number of theoretical techniques are proposed to calculate the height of this barrier and other technological parameters, viz. doping densities of n‐ and p‐layers and the lengths of the two intrinsic regions. The calculations are made possible by studying the current‐temperature, current‐ voltage, and voltage‐temperature characteristics of the device. The methods for determining the various parameters are shown to be simple and easy to carry out.

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An analysis of majority-carrier three-layer bulk semiconductor unipolar diodes

Chilana

Gupta

Srivastava

1986

Journal of Applied Physics

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Bulk unipolar diodes are majority-carrier three-layer (n-p-n) semiconductor diodes in which the current flows due to the thermionic emission of majority carriers over a barrier formed in the bulk of the material. Expressions for the barrier height of two typical bulk unipolar diodes, namely a bulk barrier diode (n++p+n) and a p-plane barrier diode (n+p++n), are derived. The functional dependence of the barrier height on various technological parameters is discussed. The two diodes are quite similar in their structure and characteristics. However, the p-plane barrier diode is more suitable as a majority-carrier diode. The variation of ideality factor and the saturation current of these diodes is shown to be very similar to the metal semiconductor diode.

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Measurement of barrier height and its controlling parameters in bulk barrier diodes

Cited by 5 publications

References 5 publications

A Simplified Approach to Reduce the Effective Barrier Height of Triangular Barrier Structures

A Simplified Approach to Reduce the Effective Barrier Height of Triangular Barrier Structures

Determination of barrier height and technological parameters of triangular barrier diodes

An analysis of majority-carrier three-layer bulk semiconductor unipolar diodes

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