2009
DOI: 10.48550/arxiv.0906.5612
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Measurement of binding energy of negatively charged excitons in GaAs/AlGaAs quantum wells

V. V. Solovyev,
I. V. Kukushkin

Abstract: We report a photoluminescence study of electron-hole complexes in specially designed semiconductor heterostructures. Placing a remote dilute layer of donors at different distances d from the quantum well leads to the transformation of luminescence spectra of neutral (X) and negatively charged (X − ) excitons. The onset of an additional spectral line and its energy dependence on d allows us to unambiguously relate the so-called X − trion state with charged excitons bound on charged donors in a barrier. The resu… Show more

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