Measurement of changes in resistance of a Ag_2+δ S nano-island on removal of dopant δ-Ag atoms

Abstract

Changes in the resistance of a Ag2+δ S nano-island, in which non-stoichiometric δ-Ag atoms work as a dopant in an n-type semiconductor, was induced by electrochemical removal of the dopant δ-Ag atoms using conductive-atomic force microscopy. The removed Ag atoms grew a Ag nanowire on a nano-island, the height of which corresponded to the measured resistance. Conductance (1/resistance) linearly decreased as the height of a Ag nanowire increased, in accordance with the theory of semiconductor conductivity. The technique has the potential for the dynamic control of conductance in nanostructures post-fabrication.

In-materio reservoir working at low frequencies in a Ag2S-island network

“…1. Ag filament growth also causes a change in the conductance of each Ag 2 S island, depending on the growth length of a given Ag filament and the size of a given Ag 2 S island, 36 which also contributes to modify the conductance of each channel. Moreover, input signals induce gradients of Ag + cations in Ag 2 S islands, which results in the formation of an inner electric potential in each Ag 2 S island.…”