Measurement of conduction band minima in ordered and disordered GaInP

Determination of ordering effects on GaInP pressure coefficients

“…They were able to apply exact linear fits against ∆E BGR to the absolute band structure data measured. This method was also successfully used for the position of the X minima determined in our previous paper [10]. All these results would seem to suggest that the pressure coefficient dependence on ordering of [4] would be better interpolated using a linear fit against ∆E BGR from 0 eV (η = 0) to 0.223 eV (η = 1).…”

“…The lattice-matched composition with GaAs is x = 0.52 at 2 K and 0.515 at 300 K [15]. The data sets that can be corrected are [10] at 2 K and those of Dong et al [16] at 300 K (solid points in Fig. 3).…”

“…A linear fit to the six data points with the 0 intercept fixed at 1 gives a line indistinguishable to that of the solid line. The measurement error in [10] is the only reported error and is shown as a vertical line in Fig. 3.…”

“…We report the determination of pressure coefficients between GaInP samples measured in the same diamond anvil cell (DAC) experiment at 10 K. The samples were from the same growth facility. We then examine these results against consistent data sets in the literature and our recently published work for other layers [10] using substrate calibration. All reported nominally lattice matched data at 300 K and below 25 K is then examined.…”

“…Each GaInP layer was approximately 1 µm thick and nominally undoped. The degree of ordering in each sample was obtained by using different growth temperatures and substrate misorientations [10]. Measurements by DXRD showed lattice mismatch for both was <0.1%.…”