Measurement of dimensions of resist mask elements below 100 nm with help of a scanning electron microscope

Gavrilenko, V. P.; Kal’nov, V. A.; Novikov, Yu. A.; Orlikovsky, A. A.; Rakov, A. V.; Todua, P. A.; Valiev, K. A.; Zhikharev, E. N.

doi:10.1117/12.814062

Cited by 27 publications

(5 citation statements)

References 8 publications

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“…Is should be stressed that for the test structure with small inclination angles of side walls (See condition (1)) the functional dependence, connecting the distance between refernce points on signals and probe diameter, is also linear, but the refernce segments characterizing the distance between signal maximums and borders of signal bottom, change differently with the increase of d. Some of them increase while some decrease [3]. At extrapolation to D = 0 those dependences cross in one point.…”

Section: Discussion Of the Resultsmentioning

confidence: 94%

“…For the structures with small inclination angles of side walls such a dependence when measured experimentally turned to be linear as well [3].…”

Section: Choosing the Reference Points And Segments In The Signalsmentioning

confidence: 96%

“…SEM probe defocusing technique [3] requires the following operations to be done. One and the same part of the studied object is being scanned with different focuses of SEM probe.…”

Section: Sem Probe Defocusing Techniquementioning

confidence: 99%

“…The second technique based on defocusing of the electron probe of SEM [3], is suitable for the structures with small inclination angles of side walls. For these structures the following condition is true s d > .…”

Section: Introductionmentioning

confidence: 99%

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SEM probe defocusing method of measurement of linear sizes of nanorelief elements

et al. 2009

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The new method of measurement of linear sizes of nanorelief elements is presented. The applicability of this method to linear measurements of nanorelief elements with trapezoid profile and wide and small inclination angles of side walls is demonstrated. The results of developed method and direct measurements are compared. Examples of measurements of linear sizes of relief pitch structures are given.

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Section: Discussion Of the Resultsmentioning

confidence: 94%

“…For the structures with small inclination angles of side walls such a dependence when measured experimentally turned to be linear as well [3].…”

Section: Choosing the Reference Points And Segments In The Signalsmentioning

confidence: 96%

“…SEM probe defocusing technique [3] requires the following operations to be done. One and the same part of the studied object is being scanned with different focuses of SEM probe.…”

Section: Sem Probe Defocusing Techniquementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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SEM probe defocusing method of measurement of linear sizes of nanorelief elements

et al. 2009

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“…One of these methods is scanning electron microscopy [1][2][3][4]. A wide variety of up to date scanning electron micro scopes (SEMs) and the development of their calibra tion methods [5][6][7][8] resulted in the creation of the Russian National Standards (GOST R) [9,10], and the development of measurement methods of linear sizes [11][12][13] in the nanometer range make this method one of the basic diagnostic methods of nano structures. However, the problem of deriving informa tion on the parameters of structures from the data obtained on the SEM is an incorrect problem [14].…”

Section: Introductionmentioning

confidence: 99%

A virtual scanning electron microscope. 4. Simulator-based implementation

Novikov

2014

Russ Microelectron

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A virtual scanning electron microscope (VSEM), which is based on a simulator of information, obtained on a real scanning electron microscope (SEM), is described. A semiempirical generation model of images in a SEM, operating in the low voltage mode and high voltage mode during recording backscattered and secondary slow electrons, forms the basis of a virtual SEM. A method of comparing real and virtual images is proposed. Examples of operation of the virtual SEM are given for elements of structures which are located both far from the edges of the structure and near these edges.

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Novel method for dimensional measurements of nanorelief elements based on electron probe defocusing in a scanning electron microscope

Филиппов

Gavrilenko

Mityukhlyaev

et al. 2014

Meas. Sci. Technol.

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In this paper, we propose a new method of measuring parameters of features of relief nanostructures. The method is based on the dependence of the length of the control intervals between certain bend points on video signal curves on the effective diameter of an electron probe. These video signals are obtained in the secondary electron imaging mode of a scanning electron microscope. Variation of the effective diameter of the electron probe is achieved by changing the microscope focus. The above dependences can be approximated by linear functions for a number of relief nanostructures, including the pitch structures of single crystal silicon with various profiles of the relief features, resist masks, etc. For appropriate choice of control intervals, the use of a constant term in such linear functions enables one to determine the size of relief features.

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Measurement of dimensions of resist mask elements below 100 nm with help of a scanning electron microscope

Cited by 27 publications

References 8 publications

SEM probe defocusing method of measurement of linear sizes of nanorelief elements

SEM probe defocusing method of measurement of linear sizes of nanorelief elements

A virtual scanning electron microscope. 4. Simulator-based implementation

Novel method for dimensional measurements of nanorelief elements based on electron probe defocusing in a scanning electron microscope

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