Measurement of electron backscattering in the energy range of neutron<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi>β</mml:mi></mml:mrow></mml:math>decay

Martin, J. W.; Yuan, J.; Hoedl, S.; Filippone, B. W.; Fong, D.; Ito, T. M.; Lin, E. K.; Tipton, B.; Young, A. R.

doi:10.1103/physrevc.68.055503

Cited by 30 publications

(25 citation statements)

References 9 publications

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“…A dependence on beam current at the 3% level had been seen for our previous current integration mode data on Be and Si target [1]. For those data, the current dependence was attributed to charging of various components in the chamber.…”

Section: B Current Integration Modesupporting

confidence: 59%

“…Our previous work on backscattering [1] from beryllium and silicon extended the work of others [2][3][4] to energies relevant for nuclear physics applications. We further extend this work to a more relevant target, organic scintillator.…”

Section: Introductionmentioning

confidence: 69%

“…As for our previous measurements, the experiment consisted of an electron gun and a scattering chamber containing a movable target [1]. Two modes of acquiring backscattering data were used.…”

Section: Experiments Overviewmentioning

confidence: 99%

“…For completeness, a catalog of the dominant systematic uncertainties considered for silicon detector mode is displayed in Table I. Aside from target deterioration, which will be discussed in the next section, these systematic uncertainties were described in detail in our previous work [1]. The effects listed in the upper portion of Table I Table I refer to extrapolation uncertainties encountered when integrating these data over q and/or θ , and these must be added in quadrature to those above when considering our results for dη/d and η from silicon detector mode.…”

Section: A Silicon Detector Modementioning

confidence: 99%

“…The custom aspects of the simulation codes were described in Ref. [1], for example, their handling of backscattering from the silicon detector itself and the detector response function (relating to this particular observable). Figure 1 compares the data with the results of these two codes.…”

Section: A Silicon Detector Modementioning

confidence: 99%

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New measurements and quantitative analysis of electron backscattering in the energy range of neutron β-decay

et al. 2006

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We report on the first detailed measurements of electron backscattering from plastic scintillator targets, extending our previous work on beryllium and silicon targets. The scintillator experiment posed several additional experimental challenges associated with charging of the scintillator target, and those challenges are addressed in detail. In addition, we quantitatively compare the energy and angular distributions of this data, and our previous data, with electron transport simulations based on the GEANT4 and PENELOPE Monte Carlo simulation codes. The PENELOPE simulation is found globally to give a superior description of the data. Such information is crucial for a broad array of weak-interaction physics experiments, where electron backscattering can give rise to the dominant detector-related systematic uncertainty.

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Section: B Current Integration Modesupporting

confidence: 59%

Section: Introductionmentioning

confidence: 69%

Section: Experiments Overviewmentioning

confidence: 99%

Section: A Silicon Detector Modementioning

confidence: 99%

Section: A Silicon Detector Modementioning

confidence: 99%

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New measurements and quantitative analysis of electron backscattering in the energy range of neutron β-decay

et al. 2006

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Electron backscattering for signal enhancement in a thin‐film CdTe radiation detector

Akbari

Shvydka

2022

Medical Physics

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Background: Thin-film cadmium telluride (CdTe) offers high average electron density, direct detection configuration, and excellent radiation hardness, making it an attractive material for radiation detectors. Although a very thin detector provides capabilities to conduct high-resolution measurements in high-energy radiation fields, it is limited by a low signal, often boosted with a front metal converter enhancing X-ray absorption. An extension of this approach can be explored through the investigation of electron backscattering phenomenon, known to be highly dependent on the material atomic number Z. Adding an electron reflector in tandem with the back electrode is proposed to be utilized for the detector signal enhancement. Purpose: We investigated the possibility of augmenting the fluence of electrons traversing CdTe thin film and thus increasing the detected signal pursuing two pathways: (1) adding a high-Z metal layer to the back of the detector surface, and (2) adding a top low-Z material to the detector layer to return its backscattered electrons. Copper (Cu) and lead (Pb) layers of varying thickness were investigated as potential metal back-reflectors, whereas polymethyl methacrylate (PMMA) water phantom material was tested as the top cover in multilayer detector structures. Methods: The Monte Carlo (MC) radiation transport package MCNP5 was first used to model a basic multilayer structure of a CdTe-sensitive volume surrounded by PMMA, under a 6-MV photon beam. Addition of Cu or Pb back-reflectors allowed for the analysis of the signal enhancement and associated changes in Compton electrons fluence spectra. Related backscattering coefficients were then calculated using EGSnrc MC user-code for monoenergetic electron sources. Analytical functions were established to represent the best fitting curves to the simulation data. Finally, electron backscattering data was related to signal enhancement in the CdTe sensitive layer based on a semiquantitative approach. Results: We studied multilayer detector structures, decoupling the effects of PMMA and the back-reflector metals, Cu or Pb, on electron backscattering for electron energy range of up to 500 keV or 1 MeV depending on the choice of metal. Adding a 100-200-µm-thick metal film below the detector sensitive volume increased the fraction of reflected electrons, especially in the low, 100-200 keV, energy range. The thickness dependence of backscattering coefficients from thin films exhibits saturations at values significantly exceeding the electron ranges. That effect was related to the large-angle electron scattering. A

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Winchell¹,

Sonzogni²

2004

Nuclear Data Sheets

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Measurement of electron backscattering in the energy range of neutronβdecay

Cited by 30 publications

References 9 publications

New measurements and quantitative analysis of electron backscattering in the energy range of neutron β-decay

New measurements and quantitative analysis of electron backscattering in the energy range of neutron β-decay

Electron backscattering for signal enhancement in a thin‐film CdTe radiation detector

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