Measurement of Elemental Composition of FeNi and SiGe Thin Films by Electron Probe Microanalysis with Stratagem Software

Electron beam lithography (EBL) and ion beam lithography (IBL) are extremely promising nanofabrication techniques for building nano-electronic devices due to their outstanding physical and electronic properties. In this review, an overview of EBL and IBL and a comparison of nanoelectronics fabricated based on four types of materials, namely graphene, ZnO, TiO2 and Ge, are presented. In each type of material, numerous practical examples are also provided in the illustration. Later, the strengths and weaknesses of EBL and IBL are presented in details. Finally, the similarities and differences between the two techniques are discussed and concluded.

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Measurement of Elemental Composition of FeNi and SiGe Thin Films by Electron Probe Microanalysis with Stratagem Software

Cited by 2 publications

References 5 publications

Measurements of the quantitative analytical depth resolution at evaporated aluminium- and silver-layers with the FEG-EPMA JEOL JXA-8530F

Measurements of the quantitative analytical depth resolution at evaporated aluminium- and silver-layers with the FEG-EPMA JEOL JXA-8530F

Recent Progress in Nano-electronic Devices Based on EBL and IBL

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