2003
DOI: 10.1016/s0169-4332(02)01472-1
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Measurement of energy dissipation between tungsten tip and Si(1 0 0)-(2×1) using sub-Ångström oscillation amplitude non-contact atomic force microscope

Abstract: Energy dissipation plays an important role in non-contact atomic force microscopy (nc-AFM), atomic manipulation and friction. In this work, we studied atomic scale energy dissipation between a tungsten tip and Si(1 0 0)-(2 Â 1) surface. Dissipation measurements are performed with a high sensitivity nc-AFM using sub-Å ngström oscillation amplitudes below resonance. We observed an increase in the dissipation as the tip is approached closer to the surface, followed by an unexpected decrease as we pass the inflect… Show more

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Cited by 7 publications
(2 citation statements)
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“…We find that γ ∼ 10 9 , 10 10 s −1 for several metallic systems (we used ρ and c T for Al, Cu, Au, and Fe), and γ ∼ 10 8 , 10 9 s −1 for several semiconducting systems (we used ρ and c T for Si, GaAs, and GaN). Such values have also been reported experimentally for various metallic and semiconducting materials [28][29][30][31][32]. The most recent and relevant one here is [31], where synchrotron infrared radiation experiments of fullerenes approaching metallic surfaces have determined γ ∼ 10 9 s −1 .…”
Section: Cnt Motionsupporting
confidence: 73%
“…We find that γ ∼ 10 9 , 10 10 s −1 for several metallic systems (we used ρ and c T for Al, Cu, Au, and Fe), and γ ∼ 10 8 , 10 9 s −1 for several semiconducting systems (we used ρ and c T for Si, GaAs, and GaN). Such values have also been reported experimentally for various metallic and semiconducting materials [28][29][30][31][32]. The most recent and relevant one here is [31], where synchrotron infrared radiation experiments of fullerenes approaching metallic surfaces have determined γ ∼ 10 9 s −1 .…”
Section: Cnt Motionsupporting
confidence: 73%
“…This suggests that the internal dissipation is not the only mechanism taking energy away, demonstrating that there is an external dissipation process, happening at the atomic scale, that typically dissipates about 0.1-1 eV/cycle (but possibly higher [4,5]). This dissipation or damping signal has been used to study a wide variety of different surfaces, including metals [6][7][8], semimetals [9][10][11], semiconductors [7,12,13], insulators [14][15][16] and insulating thin films [17][18][19][20]. Investigations have also targeted the influence of water layers [21], and molecules and molecular films [22][23][24][25] on the measured dissipation.…”
Section: Introductionmentioning
confidence: 99%