Measurement of gate delay in armchair graphene nanoribbon considering degenerate regime

2015 International Conference on Advances in Computer Engineering and Applications

Mondol

Jafar

et al. 2015

Self Cite

In recent years there are various way of predicting the current measurement through nanoscale device has been established. One of the most widely used and accepted is nonequilibrium Green's function method (NEGF). After NEGF method is approached scientist has worked a lot for describing the electronics characteristics in an easier way .Among them recursive algorithm is easier way of analyzing the electronics behavior through nanoscale devices only by mathematical modeling .By incorporating the Dyson's approximation and recursive algorithm, charge density is calculated for a definite nanostructured materials .In this paper we will first observe Dyson's approximation for calculating charge density as well as current density through the nanoscale devices . By using a unique and same dimension like length in all direction we will then calculate the current through the nanoscale device.

Section: Methodsmentioning

confidence: 99%

Theoretical modeling of current measurement in nanoscale device considering Green's function formalism

2015 International Conference on Advances in Computer Engineering and Applications

Mondol

Jafar

et al. 2015

Self Cite

“…But when the device is controlled through a gate voltage another capacitance is formed through channel which is used as graphene or can be graphene nanoribbon. There is various works on calculating the quantum capacitance through graphene or graphene nanoribbon based channel [11]- [15]. '7 , s, t n=1…”

Section: For Integer Landau Level Index the Eigen Value Becomesmentioning

confidence: 99%

Analysis of quantum capacitance and quantum hall effect of silicene for different fermi energy

Hasan

2015 IEEE International Conference on Electrical, Computer and Communication Technologies (ICECCT)

Abedin

et al. 2015

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This conference paper was presented in the 1st IEEE International Conference on Electrical, Computer and Communication Technologies, ICECCT 2015; SVS College of EngineeringCoimbatore; India; 5 March 2015 through 7 March 2015 [© 2015 Institute of Electrical and Electronics Engineers Inc.] The conference paper's definite version is available at: http:// 10.1109/ICECCT.2015.7225948Silicene is a monolayer of silicon which is again an isostructure to graphene. Due to zero bandgap of graphene, it is now subsided by silicene which opens new opportunities for electrically tunable electronic devices. But before using it as a material in a device, some electronic properties have to be investigated. In silicone, the charge carrier behaves like massless dirac fermion. For this, quantum study is very necessary and mandatory. In this paper, we will observe the quantum capacitance and the quantum hall effect for corresponding Fermi energy level for different spin coupling strength and applied electric energy.Publishe

Analytical formulation of graphene nanoribbon varactor diode

2015 International Conference on Advances in Computer Engineering and Applications

Hasan

Mondol

2015

Self Cite

Graphene nanoribbons (GNRs) are now top of the topics in nanoscale based research work. It is because the electronic device made by GNR can be integrated in larger amount on a single chip. Also because of their high mobility of carrier and higher variation of Fermi energy in response to gate voltage GNR is an extraordinary unique material in designing varactor diode. In this paper we will observe the width of GNR and bandgap energy. Then we will observe the insulator capacitance, quantum capacitance as well as gate capacitance for varying the different finger of GNR which are different in width. Then we will observe the quality factor for different width of finger of varactor diode which is made by GNR in response to their gate voltage.