Measurement of high-field electron transport in silicon carbide

Khan, I.A.; Cooper, James A.

doi:10.1109/16.822266

Cited by 113 publications

(50 citation statements)

References 4 publications

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“…5 In the low field region, the dynamic IV characteristic is linear such that the differential sheet resistance is approximately constant.…”

Section: Theorymentioning

confidence: 99%

“…Passivation is achieved using a layer of benzocyclobutene (BCB) diluted in [1,3,5] trimethylbenzene in a 1:1 ratio. 16 The BCB layer is spun onto the substrate and then patterned via photolithography.…”

Section: B Device Fabricationmentioning

confidence: 99%

“…Short pulses are used in order to minimize resistive self heating effects, which may interfere with a proper interpretation of the temperature dependence. This method has been applied to measurements on silicon, 4 silicon carbide, 5 and other materials. Additionally, a capacitive probe method has been used in order to obtain the velocity-field characteristic in semiconductor materials.…”

Section: Introductionmentioning

confidence: 99%

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A temperature dependent measurement of the carrier velocity vs. electric field characteristic for as-grown and H-intercalated epitaxial graphene on SiC

Winters

Hassan

Zirath

et al. 2013

Journal of Applied Physics

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A technique for the measurement of the electron velocity versus electric field is demonstrated on as-grown and H-intercalated graphene. Van der Pauw, coplanar microbridge, and coplanar TLM structures are fabricated in order to assess the carrier mobility, carrier concentration, sheet resistance, and contact resistance of both epi-materials. These measurements are then combined with dynamic IV measurements to extract a velocity-field characteristic. The saturated electron velocity measurements indicate a value of 2:33 Â 10 7 cm=s for the as-grown material and 1:36 Â 10 7 cm=s for the H-intercalated material at 300 K. Measurements are taken as a function of temperature from 100 K to 325 K in order to estimate the optical phonon energy E so of 4H-SiC by assuming an impurity scattering model. The extracted values of E so are 97 meV for the as-grown sample and 115 meV for the H-intercalated sample. The H-intercalated result correlates to the anticipated value of 116 meV for 4H-SiC, while the as-grown value is significantly below the expected value. Therefore, we hypothesize that the transport properties of epitaxial graphene on SiC are influenced both by intercalation and by remote phonon scattering with the SiC substrate.

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“…5 In the low field region, the dynamic IV characteristic is linear such that the differential sheet resistance is approximately constant.…”

Section: Theorymentioning

confidence: 99%

Section: B Device Fabricationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

A temperature dependent measurement of the carrier velocity vs. electric field characteristic for as-grown and H-intercalated epitaxial graphene on SiC

Winters

Hassan

Zirath

et al. 2013

Journal of Applied Physics

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show abstract

“…I-shaped test structure consisting of wide contact/access regions and a thin constriction defined by mesa isolation (of depth 100 nm) was used to investigate the velocity field characteristics (Figure 2). Due to the geometry of this device, the resistance from the ohmic/access regions is significantly lower (at least 14X) than that from the constriction 14,15 . Therefore it can be assumed that entire potential drop and current limiting mechanisms are related to the constriction.…”

mentioning

confidence: 99%

Density-dependent electron transport and precise modeling of GaN high electron mobility transistors

Bajaj

Shoron

Park

et al. 2015

Applied Physics Letters

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Abstract:We report on the direct measurement of two-dimensional sheet charge density dependence of electron transport in AlGaN/GaN high electron mobility transistors. Pulsed IV measurements established increasing electron velocities with decreasing sheet charge densities, resulting in saturation velocity of 1.9 x 10 7 cm/s at a low sheet charge density of 7.8 x 10 11 cm -2 . A new optical phonon emission-based electron velocity model for GaN is also presented. It accommodates stimulated LO phonon emission which clamps the electron velocity with strong electron-phonon interaction and long LO phonon lifetime in GaN. A comparison with the measured density-dependent saturation velocity shows that it captures the dependence rather well. Finally, the experimental result is applied in TCAD-based device simulator to predict DC and small signal characteristics of a reported GaN HEMT. Good agreement between the simulated and reported experimental results validated the measurement presented in this report and established accurate modeling of GaN HEMTs.a)

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“…Hot-electron properties in 4H-SiC have been studied at high electric fields applied parallel to the basal plane [3,4]. Channel self-heating limits the highest fields in the experimental investigations unless nanosecond voltage pulses are used [5].…”

Section: Introductionmentioning

confidence: 99%

Hot-Electron Transport and Microwave Noise in 4H-SiC

Ardaravičius¹,

Liberis²,

Kiprijanovič³

et al. 2005

Acta Phys. Pol. A

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Hot-electron transport and microwave noise are investigated for n-type 4H-SiC (n = 2 × 10 17 cm −3 ) subjected to a pulsed electric field applied parallel to the basal plane. At room temperature, the negative differential conductance, masked by field ionization at the highest fields, is observed in the field range between 280 and 350 kV/cm. The threshold fields for the negative differential conductance and field ionization increase with lattice temperature. The results on microwave noise are used to evaluate the effective hot-electron temperature and the hot-electron energy relaxation time.

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Measurement of high-field electron transport in silicon carbide

Cited by 113 publications

References 4 publications

A temperature dependent measurement of the carrier velocity vs. electric field characteristic for as-grown and H-intercalated epitaxial graphene on SiC

A temperature dependent measurement of the carrier velocity vs. electric field characteristic for as-grown and H-intercalated epitaxial graphene on SiC

Density-dependent electron transport and precise modeling of GaN high electron mobility transistors

Hot-Electron Transport and Microwave Noise in 4H-SiC

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