Measurement of index of refraction of InxAl1−xAs epitaxial layer using in situ laser reflectometry

Baek, Je Hyun; Lee, Bun; Choi, Seongim; Lee, Jun Young; Lee, El‐Hang

doi:10.1063/1.115856

Cited by 15 publications

(2 citation statements)

References 7 publications

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“…18 The upper cladding layer is also taken to be In x Al 1-x As with an average refractive index of 3 in the vicinity of 5 µm, similar to that of the lower one. 19 While the control laser is off, as shown in Fig 4(a), the refractive index contrast of the QWs and the filling materials creates a grating structure with the band gap centered at 5.312 µm, which is determined by the grating period and effective index of the non-resonant waveguide. When the control laser is on, as we explained before, if the laser intensity is 0.7 MW/cm 2 , the refractive index in the QWs region will be greatly enhanced and also be transparent to the signal wavelength which is around the |1> and |2> transition.…”

Section: Resultsmentioning

confidence: 99%

Functional photonic band gap structures based on electromagnetically induced transparency in the conduction intersubband transitions of quantum wells

Sadeghi

et al. 2007

Active Photonic Crystals

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In an active photonic band gap structure, a control laser can manipulate the probe signal coherently if the probe field satisfies the Bragg condition and is resonant or near resonant with the electronic or excitonic transitions of the constituting material structure. Using coherent effects in the conduction intersubband transitions of an n-doped quantum well, recently, we showed that one could convert a fully transparent waveguide into an active photonic band gap. Such an active photonic band gap was different from those based on superradiant excitons in two main issues: (i) the probe field was near resonant with the conduction intersubband transitions of the quantum well, and (ii) one needed a control field to generate the coherent effects and, thereafter, the band gap. Here we use such coherent processes, which include electromagnetically induced transparency and coherent enhancement of refractive index, to study a one-dimensional functional photonic band gap structure. In the absence of a control laser field such a structure acts as a conventional photonic band gap created by an off-resonant (background) refractive index perturbation. In other words, the probe field does not feel any resonance in this structure and the photonic band gap is passive. In the presence of the control field, the structure is activated and transformed into a resonant structure. Under this condition, the probe field becomes near resonant with the intersubband transitions while still satisfies the Bragg condition. We study how the coherent effects in such transitions can lead to destruction and enhancement of the photonic band gap in a waveguide structure.Keywords: Active photonic band gap, functional photonic band gap, electromagnetically induced transparency, resonance enhancement of refractive index, quantum wells, intersubband transitions, coherent effects.

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Section: Resultsmentioning

confidence: 99%

Functional photonic band gap structures based on electromagnetically induced transparency in the conduction intersubband transitions of quantum wells

Sadeghi

et al. 2007

Active Photonic Crystals

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“…The absorption coefficients a(E) and refractive indices n(E) of Al x In 1Àx As, including Al 0.48 In 0.52 As/InP, have been measured by several authors [80][81][82][83][84] (see n(E) in Figure 10.31). Figure 10.10 Optical constants in the reststrahlen region of Al x Ga 1Àx As at 300 K. The experimental data are taken from Adachi [3] The optical properties in the interband transition region of Al x In 1Àx As have been studied using SE by Rodr ıguez and Armelles [58] (0 x 1.0), Dinges et al [85] (x ¼ 0.48) and Kamlet and Terry [86] (0.305 x 0.635).…”

Section: (B) Alinasmentioning

confidence: 99%

Optical Properties

2009

Properties of Semiconductor Alloys

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The complex dielectric function «ðEÞ ¼ « 1 ðEÞ þ i« 2 ðEÞ ð 10:1Þcan be used to describe the optical properties of the medium at all photon energiesThe complex refractive index n Ã (E) can also be given bywhere n(E) is the ordinary (real) refractive index and k(E) is the extinction coefficient. From Equation (10.2), we obtain Properties of Semiconductor Alloys: Group-IV, III-V and II-VI Semiconductors Sadao Adachi

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Laser reflectometry in situ monitoring of InGaAs grown by atmospheric pressure metalorganic vapour phase epitaxy

Habchi¹,

Rebey²,

Fouzri³

et al. 2006

Applied Surface Science

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Measurement of index of refraction of InxAl1−xAs epitaxial layer using in situ laser reflectometry

Abstract: Articles you may be interested inPolarizationinsensitive fieldinduced refractive index change using a latticematched InGaAlAs/InAlAs multiple quantum well structure

Cited by 15 publications

References 7 publications

Functional photonic band gap structures based on electromagnetically induced transparency in the conduction intersubband transitions of quantum wells

Functional photonic band gap structures based on electromagnetically induced transparency in the conduction intersubband transitions of quantum wells

Optical Properties

Laser reflectometry in situ monitoring of InGaAs grown by atmospheric pressure metalorganic vapour phase epitaxy

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