Measurement of Irradiation Impact on Carrier Lifetime in a Quantum Well Laser Diode

Boutillier, M.; Gauthier-Lafaye, Olivier; Bonnefont, S.; Lozes-Dupuy, F.; Lagarde, David; Lombez, Laurent; Marie, X.; Ligeret, V.; Parillaud, O.; Krakowski, M.; Gilard, O.

doi:10.1109/tns.2009.2014451

Cited by 5 publications

(3 citation statements)

References 13 publications

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“…Since the differential carrier lifetime above threshold is not the same as the carrier lifetime at threshold that determines the laser's threshold current this result does not provide direct insight into to increase in threshold current, but it might provide an avenue for further investigation into the cause of the observed decrease in laser slope efficiency. The observed change in -factor can be taken to indicate a decrease in the photon lifetime given the findings presented in [13] Fig. 11.…”

Section: Laser Resultsmentioning

confidence: 82%

Radiation Damage Studies of Lasers and Photodiodes for Use in Multi-Gb/s Optical Data Links

Troska

Détraz

Nasr-storey

et al. 2011

IEEE Trans. Nucl. Sci.

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Section: Laser Resultsmentioning

confidence: 82%

Radiation Damage Studies of Lasers and Photodiodes for Use in Multi-Gb/s Optical Data Links

Troska

Détraz

Nasr-storey

et al. 2011

IEEE Trans. Nucl. Sci.

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“…To have a general understanding of the influence of proton irradiation on the CsPbBr 3 nanoscale laser, we conducted the optical characterization of the same CsPbBr 3 NP after irradiation by 150 keV protons with a beam fluence of 1 × 10 15 p/cm 2 under which the III–V-based lasers hardly survive. − ,, Surprisingly, the incident fluence-dependent emission spectra (Figure d) and the corresponding normalized spectral color map (inset of Figure d) confirmed the lasing oscillation of the CsPbBr 3 NP after exposure to proton irradiation at an extremely high level of the collision that destroys the CdS NPs. Besides, the CsPbBr 3 NP exhibits stable optical properties, and its lasing threshold (from 13.44 to 14.14 μJ/cm 2 ) and lasing peak (from 537.8 to 537.1 nm) only slightly shifted compared with those before proton irradiation.…”

Section: Resultsmentioning

confidence: 90%

“…Proton irradiation is also used to determine the tolerance of devices to earth and cosmic radiation. As long as the tolerance test of space-aid devices is concerned, the performance of III–V semiconductor lasers cannot be maintained under the irradiation of high-energy protons (>2 MeV), that is, the threshold currents of most lasers increase linearly with proton fluence. − Low-energy protons (<0.5 MeV) are more destructive than high-energy protons for III–V lasers because they deposit more damage inside the materials. , Therefore, the quest for high radiation-resistant semiconductor lasers under proton (especially low-energy proton) irradiation has been one of the main driving forces toward the development of new space technologies for the future.…”

Section: Introductionmentioning

confidence: 99%

Radiation-Resistant CsPbBr₃ Nanoplate-Based Lasers

Wang

et al. 2020

ACS Appl. Nano Mater.

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The use of nanoscale lasers in new space technologies can enable a variety of applications. Metal lead halide perovskites have emerged and been verified to possess many unique properties for optoelectronic applications, which are key elements for the space mission system. However, the basic knowledge of radiation damage of perovskite materials and the indepth experimental irradiation testing on their lasing properties are still lacking. Here, the performance of a CsPbBr 3 nanoplate (NP) laser is measured to be maintained after exposure to 150 keV proton beam with fluence up to 1 × 10 15 p/cm 2 , an extremely high level of collision that destroys CdS NPs with similar shapes and emission wavelengths. Lasing characteristics and carrier dynamics of the CsPbBr 3 and CdS NPs have been studied and compared in detail before and after proton irradiation with different beam fluences. Concurrently, simulation results manifest that negligible atomic displacement damage is caused by proton bombardment in CsPbBr 3 , ensuring its high resistance to proton irradiation. The findings of the high radiation resistance of the CsPbBr 3 NP lasers and the insights into the underlying mechanism are conceivably important, which might make recommendations for the development of perovskite coherent light sources for new space applications.

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Radiation hardness of semiconductor laser diodes for space communication

Li,

Shen,

Sun

et al. 2024

Applied Physics Reviews

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Semiconductor laser diodes (LDs), with merits of little volume, lightweight, low power consumption, ease of modulation, and high data rates, are great candidates for space laser communications. However, operating in a radiation environment can result in various damages to LDs. Hence, the growing focus on satellite laser communications necessitates LDs with improved radiation hardness. This review covers the efforts made in investigating the radiation effects on LDs induced by various types of radiation, including neutrons, γ-rays, protons, electrons, and other radiation particles. The conditions of radiation experiments and the behaviors and mechanisms of the degradation of LD material and device performance after being radiated are surveyed and discussed. It has been revealed that quantum dot (QD) LDs typically exhibit superior radiation tolerance compared to quantum well LDs or LDs with bulk active layers due to the enhanced confinement of carriers and reduced active areas in QD LDs, indicating significant potential for space applications. Furthermore, current challenges and issues in this field are discussed and addressed, providing a perspective and outlook for further research. Our review aims to guide the development of suitable light sources for future space laser communications, fostering high-performance satellite communications networks.

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Measurement of Irradiation Impact on Carrier Lifetime in a Quantum Well Laser Diode

Cited by 5 publications

References 13 publications

Radiation Damage Studies of Lasers and Photodiodes for Use in Multi-Gb/s Optical Data Links

Radiation Damage Studies of Lasers and Photodiodes for Use in Multi-Gb/s Optical Data Links

Radiation-Resistant CsPbBr₃ Nanoplate-Based Lasers

Radiation hardness of semiconductor laser diodes for space communication

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Measurement of Irradiation Impact on Carrier Lifetime in a Quantum Well Laser Diode

Cited by 5 publications

References 13 publications

Radiation Damage Studies of Lasers and Photodiodes for Use in Multi-Gb/s Optical Data Links

Radiation Damage Studies of Lasers and Photodiodes for Use in Multi-Gb/s Optical Data Links

Radiation-Resistant CsPbBr3 Nanoplate-Based Lasers

Radiation hardness of semiconductor laser diodes for space communication

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Radiation-Resistant CsPbBr₃ Nanoplate-Based Lasers