Measurement of junction temperature and thermal resistance in InGaAlAs/AlGaAs quantum-well superluminescent diodes (SLDs)

Zhou, Shuai; Zhang, Jing; Duan, L. H.; Tang, Zu-Rong; Guang-hua, Deng

doi:10.1142/s0217984916500469

Cited by 2 publications

(1 citation statement)

References 10 publications

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“…In the past years, various emitting wavelengths at 0.4 µm GaN‐based, 0.8–1.2 µm GaAs‐based, and 1.3–1.6 µm InP‐based SLDs have been reported. In general, SLDs have an inherent problem, however, in that the optical output powers differ greatly between the transverse‐electric polarized (TE, in which the electric field component is perpendicular to the direction of the layer growth) and transverse‐magnetic polarized (TM, in which the electric field component is parallel to the direction of the layer growth) modes.…”

Section: Introductionmentioning

confidence: 99%

Superluminescent Diode at 0.8-µm with a GaAsP/AlGaAs Tensile-Strained Quantum Well

Zhou¹,

Tang²,

Liu³

et al. 2018

Phys. Status Solidi A

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High‐power and low‐polarization superluminescent diodes emitting at 0.8‐µm are fabricated by using a tensile‐strained GaAsP quantum well material. Under a low direct current operation with a Peltier thermoelectric element temperature control (25 °C), the output power of the fundamental transverse‐magnetic polarized mode dominateds over that of the fundamental transverse‐electric polarized mode. The total output powers of the two modes reach an equal state for the 1.06‐mm‐long device at ≈340 mA. The inherent superluminescent mode operations of the superluminescent diode with full‐width at half maximum of spectrum increasing along with the increment of current injection and temperature are discussed. The superluminescent diode is able to operate up to 85 °C and 400 mA. Output powers exceeding 40 mW and spectral ripples better than 0.14 dB are achieved.

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Section: Introductionmentioning

confidence: 99%

Superluminescent Diode at 0.8-µm with a GaAsP/AlGaAs Tensile-Strained Quantum Well

Zhou¹,

Tang²,

Liu³

et al. 2018

Phys. Status Solidi A

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Influence of face-down and face-up bonding on the degree of polarization of superluminescent diode

Zhou¹

2017

Int. J. Mod. Phys. B

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Face-down and face-up bonded polarization-insensitive buried heterojunction superluminescent diode has been studied in terms of thermal behavior and degree of polarization. Our studies have shown that the thermal rollover of current–power characteristic for face-down bonding was about 1.16 times higher than face-up configurations, and face-down bonding can offer higher heat transfer than face-up one. However, face-down bonding will cause more physical stress to the device, and the average value of degree of polarization for face-down bonding devices (35.3%) was much higher than face-up ones (−2.1%). After 48 h high temperature storage at 85[Formula: see text]C, the stress of face-down devices obtained a better relaxation due to the more stress accumulation.

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Measurement of junction temperature and thermal resistance in InGaAlAs/AlGaAs quantum-well superluminescent diodes (SLDs)

Cited by 2 publications

References 10 publications

Superluminescent Diode at 0.8-µm with a GaAsP/AlGaAs Tensile-Strained Quantum Well

Superluminescent Diode at 0.8-µm with a GaAsP/AlGaAs Tensile-Strained Quantum Well

Influence of face-down and face-up bonding on the degree of polarization of superluminescent diode

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