“…This allowed a curve of error cross-section to be developed easily by the use of only one ion specie in some cases. However, as the testing became more sophisticated and knowledge accumulated, experimental results (10,11,12) showed that the use of an equivalent LET given by "LET x secant O," was only valid in some cases. In addition, the ionization charge in the distribution around an ion's track in silicon may influence the experimental SEU sensitivity of a device.…”