Measurement of stable species present during filament-assisted diamond growth

Harris, Stephen J.; Weiner, Anita M.; Perry, Thomas A.

doi:10.1063/1.99925

Cited by 229 publications

(62 citation statements)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…There have been many studies of the gas-phase chemistry during diamond CVD [58][59][60][61][62][63][64][65][66][67][68]. These investigations revealed that atomic hydrogen and hydrocarbon are perhaps the most critical determinants of CVD diamond as well as its quality and growth rate.…”

Section: The Gas-phase Chemical Environmentmentioning

confidence: 99%

See 1 more Smart Citation

Diamond growth by chemical vapour deposition

Grácio¹,

Fan²,

Madaleno³

2010

J. Phys. D: Appl. Phys.

256

156

View full text Add to dashboard Cite

This paper reviews the growth of diamond by chemical vapour deposition (CVD). It includes the following seven parts: (1) Properties of diamond: this part briefly introduces the unique properties of diamond and their origin and lists some of the most common diamond applications. (2) Growth of diamond by CVD: this part reviews the history and the methods of growing CVD diamond. (3) Mechanisms of CVD diamond growth: this part discusses the current understanding on the growth of metastable diamond from the vapour phase. (4) Characterization of CVD diamond: we discuss the two most common techniques, Raman and XRD, which have been intensively employed for characterizing CVD diamond. (5) CVD diamond growth characteristics: this part demonstrates the characteristics of diamond nucleation and growth on various types of substrate materials. (6) Nanocrystalline diamond: in this section, we present an introduction to the growth mechanisms of nanocrystalline diamond and discuss their Raman features. This paper provides necessary information for those who are starting to work in the field of CVD diamond, as well as for those who need a relatively complete picture of the growth of CVD diamond.

show abstract

Section: The Gas-phase Chemical Environmentmentioning

confidence: 99%

“…At 20 Torr, the characteristic time for this reaction is in the order of 1 sec [59,60]. In time t an atom may diffuse a distance of order Dt , where D is the diffusion coefficient.…”

Section: Atomic Hydrogenmentioning

confidence: 99%

Diamond growth by chemical vapour deposition

Grácio¹,

Fan²,

Madaleno³

2010

J. Phys. D: Appl. Phys.

256

156

View full text Add to dashboard Cite

show abstract

“…Considerable research in the field has been aimed at determining the "growth" species, i.e., the gas phase species directly responsible for diamond formation [11,121, and recent experiments have demonstrated that the CH 3 radical is the primary growth species in the CVD systems that have been examined [13][14][15][16][17][18][19]. One proposed chemical kinetics mechanism [21, which takes CH 3 as the growth species, successfully predicts [20][21][22], experimental growth rates for both RF [211 and DC [23] plasma torches, for flames at low and atmospheric pressure [15,24,25], and for filament systems as a function of pressure and composition [16,17], without the use of adjustable parameters.…”

Section: Introductionmentioning

confidence: 99%

Growth on the reconstructed diamond (100) surface

Harris¹,

Goodwin²

1993

J. Phys. Chem.

Self Cite

226

107

View full text Add to dashboard Cite

“…It is found that this range of residence time does not allow the flow to reach equilibrium at the reactor condictions. For similar residence times, temperatures and pressures, it has been found that mixtures of methane and hydrogen in thermal vapor deposition systems used to grow diamond films also falls short of reaching equilibrium gas-phase conditions [15,16,17].…”

Section: Kinetic Mechanismmentioning

confidence: 99%

Kinetic and Surface Mechanisms to Growth of Hexagonal Boron Nitride

2002

View full text Add to dashboard Cite

A mechanism is presented for the gas-phase chemistry and surface reactions describing the growth of boron nitride films. The gas phase mechanism includes 33 species and 216 elementary reactions. Rate parameters for 117 elementary reactions were obtained from published experimental/theoretical data and those for the other 99 were determined using transition state theory. The mechanism examined here is an extension and update of a previous mechanism that contained 26 species and 67 elementary reactions. Standard reaction flux/pathway and gradient sensitivity analysis techniques are used to identify important reaction pathways. The calculations were handled through the use of the ChemKin software package. The model was applied to the growth of hexagonal boron nitride in an arcjet plasma source operating on mixture of BF 3 , H 2 and N 2 . From the growth rate and experimental conditions for such reactors, this work demonstrates that species with mole fractions in the range of 1 10 -10 -2 10 -4 (easily generated by gas-phase conditions) can account for the measured growth rate. A comparison of the predicted mole fractions of the gas-phase species present for the experimental residence times with those required to account for the measured film growth rates allows us to identify possible growth precursors. At the experimental settings, it is found that the residence time of the reacting species does not allow the flow to reach the chemical equilibrium, and that many radicals other than the source gases can account for the measured BN growth rate. The gas-phase is shown to be removed from thermodynamic equilibrium. For comparison, the equilibrium mole fractions were also calculated using an available equilibrium chemistry solver, STANJAN. Growth rates of 10 -9 to 10 -6 kg m -1 s -1 were measured for a wide range of H 2 , BF 3 and NF 3 flux. Both the finite-rate kinetics and equilibrium calculations confirm the importance of added hydrogen to facilitate boron nitride condensation from the gas phase. A simple surface mechanism with 7 steps is proposed with rate constants chosen to best fit the experimental growth kinetics. The results of the model, with surface rate coefficients determined from analogous gas-phase reactions, tuned slightly to agree with the experimental growth rates for BF x , x = 1, 2 or 3, as the rate-limiting growth precursor. It is also shown that the hydrogen atom has a great influence in the growth rate and that fluorine atom etches the hBN films.

show abstract

Measurement of stable species present during filament-assisted diamond growth

Cited by 229 publications

References 17 publications

Diamond growth by chemical vapour deposition

Diamond growth by chemical vapour deposition

Growth on the reconstructed diamond (100) surface

Kinetic and Surface Mechanisms to Growth of Hexagonal Boron Nitride

Contact Info

Product

Resources

About