Measurement of the Fano factor for protons on silicon

Yamaya, T.; Asano, R.; Endô, Hiroshi; Umeda, K.

doi:10.1016/0029-554x(79)90347-1

Cited by 14 publications

(4 citation statements)

References 18 publications

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“…Gaussian fitting was made with the peaks acquired in Figure 6 a, and the FWHMs of the three peaks were attained: 183.5 keV for 239 Pu, 190.2 keV for 243 Am, and 187.7 keV for 244 Cm. Many factors may contribute to the results: the statistical broadening (about 5.9 keV for 239 Pu, 6.0 keV for 243 Am, and 6.3 keV for 244 Cm) [ 14 , 30 ], the energy straggling of the dead layer (about 11 keV) [ 31 ], the electronic noise (about 10 keV), etc. Excluding the influence of statistical broadening, the dead layer’s straggling, and the electronic noise, we attained the inherent FWHMs of 182.8 keV for 239 Pu, 189.5 keV for 243 Am, and 187.0 keV for 244 Cm, as well as an optimum energy resolution of about 3.22% at a reverse bias voltage of 200 V.…”

Section: Resultsmentioning

confidence: 99%

The Fabrication and Characterization of Ni/4H-SiC Schottky Diode Radiation Detectors with a Sensitive Area of up to 4 cm2

Liu

Jin

Liu

et al. 2017

Sensors

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Silicon carbide (SiC) detectors of an Ni/4H-SiC Schottky diode structure and with sensitive areas of 1–4 cm2 were fabricated using high-quality lightly doped epitaxial 4H-SiC material, and were tested in the detection of alpha particles and pulsed X-rays/UV-light. A linear energy response to alpha particles ranging from 5.157 to 5.805 MeV was obtained. The detectors were proved to have a low dark current, a good energy resolution, and a high neutron/gamma discrimination for pulsed radiation, showing the advantages in charged particle detection and neutron detection in high-temperature and high-radiation environments.

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Section: Resultsmentioning

confidence: 99%

The Fabrication and Characterization of Ni/4H-SiC Schottky Diode Radiation Detectors with a Sensitive Area of up to 4 cm2

Liu

Jin

Liu

et al. 2017

Sensors

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“…Fano factor of diamond obtained from this experiment and those of silicon and germanium referred from the literature . Filled circles represent data for Fano factors for alpha particles.…”

Section: Resultsmentioning

confidence: 99%

“…Alkhazov et al reports that 6 MeV alpha particles have 3.5 keV of energy spreading because of inelastic scattering in silicon . Yamaya et al reports that the Fano factor for proton was 0.16 ± 0.04 . Moreover, Steinbauer et al reports 8.5 keV of energy resolution for 5.486 MeV alpha particles, which is equivalent to a Fano factor of 0.49 .…”

Section: Resultsmentioning

confidence: 99%

Fano factor evaluation of diamond detectors for alpha particles

Shimaoka

Kaneko

Sato

et al. 2016

Physica Status Solidi (a)

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This report is the first describing experimental evaluation of Fano factor for diamond detectors. High-quality self-standing chemical vapor deposited diamond samples were produced using lift-off method. Alpha-particle induced charge measurements were taken for three samples. A 13.1 AE0.07 eV of the average electron-hole pair creation energy and excellent energy resolution of approximately 0.3% were found for 5.486 MeV alpha particles from an 241 Am radioactive source. The best Fano factor for 5.486 MeV alpha particles, calculated from experimentally obtained epsilon values and the detector intrinsic energy resolution, was 0.382 AE 0.007.

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“…7b). Atomic scattering processes [11], fluctuations in the number of charges created by a nuclear recoil [12] and multiple scattering (see Section 5.3) are in particular expected to give an intrinsic width to the Q distribution for nuclear recoils and thus explain this behavior. The experimental σ Qn dependance on recoil energy is properly described when a constant C is quadratically added to the term associated with the experimental resolution.…”

Section: Electron and Nuclear Recoils Zones Standard Deviationsmentioning

confidence: 99%