Measurement of the hot carrier damage profile in LDMOS devices stressed at high drain voltage

Performance drifts of N-MOSFETs under pulsed RF life test

“…This variation affects the RF performances. According to the literature [14][15][16], the degradation cause for RF N-LDMOS technology is attributed to hot electron-induced interface state generation [16][17][18]. May be state interface Si/SiO 2 between drain and gate are responsible of this phenomenon.…”