Measurement of the Schottky barrier height between Ni-InGaAs alloy and In0.53Ga0.47As

Mehari, Shlomo; Gavrilov, A.; Cohen, Shimon; Shekhter, Pini; Eizenberg, M.; Ritter, D.

doi:10.1063/1.4746254

Cited by 16 publications

(10 citation statements)

References 11 publications

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“…In our previous work, 8 we observed that the qualities that lay in the NiInGaAs layer have as a contact. In order to understand the factors that lead to the creation of these qualities, additional material characterization techniques were used.…”

Section: Introductionmentioning

confidence: 82%

“…[4][5][6][7] We have recently investigated this system electrically and showed a near ideal current-voltage behavior with a Schottky barrier height of 0.24 6 0.01 eV. 8 In x Ga 1Àx As based transistors with NiInGaAs S/D regions were investigated and found to function successfully with a very high peak velocity. 6,9 Recently, we 8 as well as others 10 analyzed the NiInGaAs phase formed at the interface between Ni and InGaAs.…”

Section: Introductionmentioning

confidence: 99%

“…The results of this method were complementary to the TEM findings of the formation of a crystalline layer after Ni deposition and subsequent rapid thermal annealing (RTA) treatment. 6,8 The appearance of only one reflection on the symmetric x-ray spectrum at an angle of 2h ¼ 86. 6 (Ref.…”

Section: Introductionmentioning

confidence: 99%

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Epitaxial NiInGaAs formed by solid state reaction on In0.53Ga0.47As: Structural and chemical study

Shekhter

Mehari

Ritter

et al. 2013

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Thin epitaxial layers of NiInGaAs formed by solid state reaction of Ni on (100) In0.53Ga0.47As are used as metal source and drain regions for In0.53Ga0.47As metal oxide field effect transistors. Here, the authors present a structural and chemical analysis of this phase. The stoichiometry of the layer was determined as Ni2In0.53Ga0.47As. Transmission electron microscopy revealed an abrupt interface and a detailed x-ray diffraction analysis showed that the layer is of a hexagonal lattice, which grows epitaxially with the orientation relations of {100}InGaAs||{100}NiInGaAs; ⟨011¯⟩InGaAs||[001]NiInGaAs. Only one domain can be observed in this epitaxial growth. Understanding the structure of these layers is a crucial step not only in their incorporation into InGaAs based devices but also a step toward novel devices.

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Section: Introductionmentioning

confidence: 82%

Section: Introductionmentioning

confidence: 99%

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Epitaxial NiInGaAs formed by solid state reaction on In0.53Ga0.47As: Structural and chemical study

Shekhter

Mehari

Ritter

et al. 2013

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

Self Cite

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“…In addition, the NiInGaAs comes now in direct contact with undoped InGaAs. Rather than an ohmic contact, this could result in a Schottky barrier [32]. In this instance, R on should show a negative temperature dependence, as observed in Fig.…”

Section: The Role Of the Top Contactmentioning

confidence: 91%

Sub-10-nm-Diameter InGaAs Vertical Nanowire MOSFETs: Ni Versus Mo Contacts

Zhao

Heidelberger

Fitzgerald

et al. 2018

IEEE Trans. Electron Devices

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“…According to thermionic emission theory, the Schottky diode's current-voltage characteristics are already expressed in the literature [10][11][12][13][14]. One can find the I-V graph for different metal types in [10][11][12][13][14]. In the case of forward bias current for nonideal conditions, the equation is expressed as follows:…”

Section: Ideality Factormentioning

confidence: 99%

On differential depletion length of Schottky diodes with copper-nickel alloy metal of front contact

Korkut¹

2018

Turk J Phys

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This work was prepared in two sections; the first section describes how to alloy Schottky diodes and aims to understand how metal alloys affect the essential parameters of Schottky diodes at the metal-semiconductor interface. The second section covers the varying differential depletion length in (Cu% Ni%)/n-Si/Al binary-alloyed Schottky diodes. After collecting data, the characteristics of Schottky diodes are calculated by plotting them with an increasing percentage ratio of the first element. We see that alloyed Schottky diode characteristics significantly depend on the mass percentage ratio of the first element. Significant results are seen: first, V bi (built-in potential) directly affects the characteristics of Schottky diodes with a turning point occurring at the V bi point on the axis, and second, the built-in potential plays a key role in Schottky diode characteristics. Estimation of the depletion length depends on the built-in potential. For the forward and reverse bias cases, the depletion length versus voltage graphs are identical, but with their symmetry mirrored. Analyzing the differential depletion lengths, it is easily seen that they have higher or lower values compared to the zero depletion length for the forward and reverse bias cases, respectively. When the depletion length formula is expanded in a series, new equations are obtained to show significant effects on Schottky diode characteristics.

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Measurement of the Schottky barrier height between Ni-InGaAs alloy and In0.53Ga0.47As

Abstract: Articles you may be interested inVery low resistance alloyed Ni-based ohmic contacts to InP-capped and uncapped n+-In0.53 Ga0.47As

Cited by 16 publications

References 11 publications

Epitaxial NiInGaAs formed by solid state reaction on In0.53Ga0.47As: Structural and chemical study

Epitaxial NiInGaAs formed by solid state reaction on In0.53Ga0.47As: Structural and chemical study

Sub-10-nm-Diameter InGaAs Vertical Nanowire MOSFETs: Ni Versus Mo Contacts

On differential depletion length of Schottky diodes with copper-nickel alloy metal of front contact

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