Measurement of the vapour pressure of Bismuth by a radioactive tracer technique

The vapor pressure of liquid bismuth in the temperature range 800°—1050°K has been measured by the torsion-effusion method. The values obtained are represented by the equation: log10p (mm Hg) = 8.579— (10 108/T). A few separate Knudsen measurements have been performed in the same temperature range and the results used to calculate the molecular weight of bismuth vapor, and thus the heat of dissociation for the reaction ½ Bi2→Bi.

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Mechanisms of droplet formation and Bi incorporation during molecular beam epitaxy of GaAsBi

Vardar

Paleg

Warren

et al. 2013

Applied Physics Letters

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We have examined the mechanisms of droplet formation and Bi incorporation during molecular beam epitaxy of GaAsBi. We consider the role of the transition from group-V-rich to group-III-rich conditions, i.e., the stoichiometry threshold, in the presence of Bi. For As-rich GaAsBi growth, Bi acts as a surfactant, leading to the formation of droplet-free GaAsBi films. For films within 10% of the stoichiometric GaAsBi growth regime, surface Ga droplets are observed. However, for Ga-rich GaAsBi growth, Bi acts as an anti-surfactant, inducing Ga-Bi droplet formation. We propose a growth mechanism based upon the growth-rate-dependence of the stoichiometry threshold for GaAsBi.

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Measurement of the vapour pressure of Bismuth by a radioactive tracer technique

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Vapor Pressure of Liquid Bismuth

Mechanisms of droplet formation and Bi incorporation during molecular beam epitaxy of GaAsBi

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