Measurement of the Velocity of the Crystal-Liquid Interface in Pulsed Laser Annealing of Si

Galvin, G. J.; Thompson, Michael O.; Mayer, J. W.; Hammond, R. B.; Paulter, Nicholas G.; Peercy, P. S.

doi:10.1103/physrevlett.48.33

Cited by 165 publications

(18 citation statements)

References 8 publications

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“…One such application is the crystallization of amorphous Si. 1 In addition, the effect of short pulse laser irradiation on metals is important for understanding material processing techniques such as laser machining and welding, and for obtaining high-temperature thermophysical data. The rapid heating and subsequent phase transitions that occur during short pulse irradaition can be complex, and have been the subject of theoretical and experimental investigations.…”

Section: Introductionmentioning

confidence: 99%

Pulsed-laser-induced nanoscale island formation in thin metal-on-oxide films

2005

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The mechanisms controlling the nanostructuring of thin metal-on-oxide films by nanosecond pulsed excimer lasers are investigated. When permitted by the interfacial energetics, the breakup of the metal film into nanoscale islands is observed. A range of metals ͑Au, Ag, Mo, Ni, Ti, and Zn͒ with differing physical and thermodynamic properties, and differing tendencies for oxide formation, are investigated. The nature of the interfacial metal-substrate interaction, the thermal conductivity of the substrate, and the initial thickness of the metal film are all shown to be of importance when discussing the mechanism for nanoscale island formation under high fluence irradiation. It is postulated that the resulting nanoparticle size distribution is influenced by the surface roughness of the initial film and the Rayleigh instability criterion. The results obtained are compared with simulations of the heat transfer through the film in order to further elucidate the mechanisms. The results are expected to be applicable to the laser induced melting of a large range of different materials, where poor wetting of substrate by the liquid phase is observed.

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Section: Introductionmentioning

confidence: 99%

Pulsed-laser-induced nanoscale island formation in thin metal-on-oxide films

2005

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“…Intuitively, the remaining Ti decreases as the energy density of the annealing increases, since the duration of the melting is longer. 33 For 0.8 J/cm 2 the remaining Ti after the annealing is in the 52.7 -81.8% range, depending on the implanted dose. However, even though the Ti loss is high, the remaining concentration is still over the Mott limit.…”

Section: à2mentioning

confidence: 99%

“…33 As a result, the snow-plow effect tends to expel a certain quantity of the implanted impurities out of the sample through the surface. The expelled Ti after the PLM annealing can be easily calculated by integrating the area below the ToF-SIMS profile and relating the result to the implanted dose.…”

Section: à2mentioning

confidence: 99%

Depth profile study of Ti implanted Si at very high doses

Olea

Pastor

Toledano-Luque

et al. 2011

Journal of Applied Physics

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A detailed study on the resulting impurity profile in Si samples implanted with high doses of Ti and subsequently annealed by pulsed-laser melting (PLM) is reported. Two different effects are shown to rule the impurity profile redistribution during the annealing. During the melting stage, the thickness of the implanted layer increases while the maximum peak concentration decreases (box-shaped effect). On the contrary, during the solidifying stage, the thickness of the layer decreases and the maximum peak concentration increases (snow-plow effect). Both effects are more pronounced as the energy density of the annealing increases. Moreover, as a direct consequence of the snow-plow effect, part of the impurities is expelled from the sample through the surface.

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“…The system of silicon film/glass substrate gives an essential advantage of a low energy required for crystallization of silicon films. Transient conductance measurements are useful to observe rapid melting and solidification phenomena [13,14]. Figure 1a shows the transient electrical conductance per unit area when a pulsed XeCl excimer laser with a pulse width of 30 ns was irradiated to 50-nm-thick Si films formed on a quartz substrate [15].…”

Section: Laser-induced Heating Followed By Melting Of Silicon and Germentioning

confidence: 99%

Laser crystallization for large-area electronics

Sameshima

2009

Appl. Phys. A

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Laser crystallization is reviewed for the purpose of fabrication of polycrystalline silicon thin film transistors (poly-Si TFTs). Laser-induced rapid heating is important for formation of crystalline films with a low thermal budget. Reduction of electrically active defects located at grain boundaries is essential for improving electrical properties of poly-Si films and achieving poly-Si TFTs with high performances. The internal film stress is attractive to increase the carrier mobility. Recent developments in laser crystallization methods with pulsed and continuous-wave lasers are also reviewed. Control of heat flow results in crystalline grain growth in the lateral direction, which is important for fabrication of large crystalline grains. We also report an annealing method using a high-power infrared semiconductor laser. High-power lasers will be attractive for rapid formation of crystalline films over a large area and activation of silicon with impurity atoms.

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Measurement of the Velocity of the Crystal-Liquid Interface in Pulsed Laser Annealing of Si

Cited by 165 publications

References 8 publications

Pulsed-laser-induced nanoscale island formation in thin metal-on-oxide films

Pulsed-laser-induced nanoscale island formation in thin metal-on-oxide films

Depth profile study of Ti implanted Si at very high doses

Laser crystallization for large-area electronics

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