Measurement of thermal diffusivity of thin films and foils using a laser scanning microscope

Kemp, Anthony I.S.; Srinivas, T. A. S.; Fettig, Rainer K.; Ruppel, Wolfgang

doi:10.1063/1.1145255

Cited by 13 publications

(2 citation statements)

References 16 publications

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“…Other laser-based thermal-wave measurement systems for the thermal diffusivity of free-standing thin film have been developed. 10,11 No systematic study, however, has been reported on the effects of the laser beam configuration on the experimental results.…”

Section: Introductionmentioning

confidence: 99%

Thermal-wave measurement of thin-film thermal diffusivity with different laser beam configurations

Zhang

Chen

1996

Review of Scientific Instruments

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The growth and characterization of layered, binary thinfilm oxides: MgO-NiO and CaO-NiO J.This work investigates and compares three laser-based ac heating methods for measuring thermal diffusivity of free-standing thin-film structures. These methods employ a modulated laser beam as the heating source and a miniature thermocouple as the temperature sensor. Three laser beam configurations including uniform illumination, a line, and a point are utilized as the heating sources. Different models and systems are developed for these beam configurations. Samples studied include a GaAs/AlGaAs two-layer thin-film structure, a periodic GaAs/AlAs thin-film structure, and a silicon film. Both the phase and amplitude signals of the ac temperature rise of samples are used to derive their thermal diffusivities. It is found that the uniform illumination method is more susceptible to error than the other two configurations due to two-dimensional effects. Both the line and the point source configurations yield satisfactory results.

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Section: Introductionmentioning

confidence: 99%

Thermal-wave measurement of thin-film thermal diffusivity with different laser beam configurations

Zhang

Chen

1996

Review of Scientific Instruments

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“…The TTR signal is modeled with a one-dimensional heat flow equation using a twoparameter fitting routine. Another method, the laser scanning microscope [12], was reported for measuring the thermal diffusivity of freestanding thin films by scanning the film surface with a sinusoidal modulated signal. Here, a fine-focused laser beam is applied on a fixed point of the film surface for producing a thermovoltage signal.…”

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confidence: 99%

Thermal Properties of Metallic Films at Room Conditions by the Heating Slope

Lugo

Oliva

2016

Journal of Thermophysics and Heat Transfer

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An analytical model and a methodology for determining the thermal diffusivity and the thermal conductivity of metallic thin films at room conditions are proposed. The analytical model is based on the one-dimensional heat transfer equation, which allows estimation of the thermal conductivity and thermal diffusivity through the initial heating slope value. The thermal conductivity and thermal diffusivity values of gold and aluminum films from 20 to 200 nm thicknesses, determined from the initial slope of the measured heating profiles, and their comparison with the analytical ones are discussed. Results show that thermal diffusivity increases from 30 6 × 10 −6 m 2 ∕s to 127 12 × 10 −6 m 2 ∕s for gold films, and it increases from 15 7 × 10 −6 m 2 ∕s to 95 10 × 10 −6 m 2 ∕s for aluminum films; although thermal conductivity increases from (132 35) to 306 48 W∕m · K for gold films and from (58 30) to 243 39 W∕m · K for aluminum films, when the film thickness increases. Nomenclature A = area of the film or substrate, m 2 C f = heat capacity of the film, J∕kg · K C p = specific heat at constant pressure of the film, J∕kg · K D f = thermal diffusivity of the film, m 2 ∕s d f = thin-film thickness, m d s = substrate thickness, m h = convection coefficient, W∕m 2 · K k f = thermal conductivity of the film, W∕m · K k s = thermal conductivity of the substrate, W∕m · K L = length of thin film, m m f = mass of the film, kg P 0 = applied power on the film, mW Q c = conduction heat of the substrate, mW Q hf = convection heat of the film, mW Q rf = radiation heat of the film, mW Q sf = sensible heat of the film, mW R film = electrical resistance of the film, Ω R film·f = final electrical resistance of the film, Ω R film·i = initial electrical resistance of the film, Ω R ref = electrical resistance of reference, Ω T f = temperature of the film, K T s = temperature of the substrate, K T 0 = room temperature, K t c = time of the applied pulse, s W out = transfer function, V w = width of thin film, m α f = resistance-temperature coefficient of the film, K −1 ΔR = change of electrical resistance of the film, Ω ΔT = lineal change of temperature of the film, K ΔT f = changes of temperature of the film, K ΔT f ∕Δt = initial heating slope of the film, K∕s ΔT ftr = changes of temperature of the film in the transitory regime, K ΔT s = changes of temperature of the substrate, K ε f = emissivity of the film σ = Stefan-Boltzman´s constant; 5.6704×10 −8 W∕m 2 K 4 Subscripts Au = gold samples Al = aluminum samples bulk = bulk values of the materials f = thin film s = substrate 0 = reference state

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Thermal Effusivity Determination of Metallic Films of Nanometric Thickness by the Electrical Micropulse Method

Lugo

Oliva

2016

Int J Thermophys

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Measurement of thermal diffusivity of thin films and foils using a laser scanning microscope

Abstract: Measurement of thermal diffusivities of thin metallic films using the ac calorimetric method

Cited by 13 publications

References 16 publications

Thermal-wave measurement of thin-film thermal diffusivity with different laser beam configurations

Thermal-wave measurement of thin-film thermal diffusivity with different laser beam configurations

Thermal Properties of Metallic Films at Room Conditions by the Heating Slope

Thermal Effusivity Determination of Metallic Films of Nanometric Thickness by the Electrical Micropulse Method

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