Measurements and Computations of Internal Temperatures of the IGBT and the Diode Situated in the Common Case

Górecki, Paweł; Górecki, Krzysztof

doi:10.3390/electronics10020210

Cited by 19 publications

(8 citation statements)

References 30 publications

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“…The thermal impedance Z th (t) and thermal resistance R th of the samples were measured. For this purpose, the measuring set-up, shown in Figure 4, was used [16]. An indirect electrical method was used based on gate-emitter voltage V GE as a thermo-sensitive parameter [17].…”

Section: Thermal Measurementsmentioning

confidence: 99%

The Influence of Soldering Profile on the Thermal Parameters of Insulated Gate Bipolar Transistors (IGBTs)

et al. 2021

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The effect of solder joint fabrication on the thermal properties of IGBTs soldered onto glass-epoxy substrate (FR4) was investigated. Glass-epoxy substrates with a thickness of 1.50 mm, covered with a 35 μm thick Cu layer, were used. A surface finish was prepared from a hot air leveling (HAL) Sn99Cu0.7Ag0.3 layer with a thickness of 1 ÷ 40 μm. IGBT transistors NGB8207BN were soldered with SACX0307 (Sn99Ag0.3Cu0.7) paste. The samples were soldered in different soldering ovens and at different temperature profiles. The thermal impedance Zth(t) and thermal resistance Rthof the samples were measured. Microstructural and voids analyses were performed. It was found that the differences for different samples reached 15% and 20% for Zth(t) and Rth, respectively. Although the ratio of the gas voids in the solder joints varied between 3% and 30%, no correlation between the void ratios and Rth increase was found. In the case of the different soldering technologies, the microstructure of the solder joint showed significant differences in the thickness of the intermetallic compounds (IMC) layer; these differences correlated well with the time above liquidus during the soldering process. The thermal parameters of IGBTs could be changed due to the increased thermal conductivity of the IMC layer as compared to the thermal conductivity of the solder bulk. Our research highlighted the importance of the soldering technology used and the thermal profile in the case of the assembly of IGBT components.

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Section: Thermal Measurementsmentioning

confidence: 99%

The Influence of Soldering Profile on the Thermal Parameters of Insulated Gate Bipolar Transistors (IGBTs)

et al. 2021

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“…The results of computations characteristics presented in these papers proved th rectly model DC characteristics only at room temp controlling the gate. Especially, essential divergen and measurements are visible for temperatures hi In the paper [45] it is shown that for the structure in Figure 1, two dies are mounted in the common case. One of these dies contains the transistor and the other-the diode.…”

Section: Introductionmentioning

confidence: 99%

“…To formulate such a model, the classical netw in Figure 1 In the paper [45] it is shown that for the struc in the common case. One of these dies contains the In our previous papers [19,28] the accuracy of [18,46] was analysed.…”

Section: Introductionmentioning

confidence: 99%

Accurate Circuit-Level Modelling of IGBTs with Thermal Phenomena Taken into Account

Górecki

Zarębski

2021

Energies

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This paper proposes a new compact electrothermal model of the Insulated Gate Bipolar Transistors (IGBT) dedicated for SPICE (Simulation Program with Integrated Circuit Emphasis). This model makes it possible to compute the non-isothermal DC characteristics of the considered transistor and the waveforms of terminal voltages and currents of the investigated device and its internal temperature at transients. This model takes into account the nonlinearity of thermal phenomena in this device. The form of the formulated model is described and the problem of estimating its parameter values is discussed. The correctness of the proposed model was verified experimentally both at DC operation and at transients. The obtained results are compared to the results of computations performed with the use of the classical literature model. A very good agreement between the results of measurements and computations performed with the new model is obtained at different cooling conditions and in a wide range of changes of parameters characterising the electrical excitation of the tested device.

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“…It is worth underlining that for semiconductor devices that are operating in power electronic networks, the waveforms p(t) and T j (t) are periodical functions at the steady state [12,13]. Of course, the shape of the waveform p(t) does not influence the value of temperature T j at the steady state, which mostly depends on the mean value of the dissipated power [14].…”

Section: Introductionmentioning

confidence: 99%

“…The paper [21] shows the advantages of using selected TSPs of the power MOS transistor, whereas the paper [14] shows the influence of the selection of the TSP of the IGBT on the accuracy of determining its internal temperature. On the other hand, in [22] it is shown that the non-uniformity of the temperature distribution in the semiconductor die of the power MOS transistor may exceed even 50 K and the justifiability of using a compact thermal model of this device is discussed.…”

Section: Introductionmentioning

confidence: 99%

Selected Problems of Power MOSFETs Thermal Parameters Measurements

Górecki

Posobkiewicz

2021

Energies

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In the paper, selected problems that are related to the measurements of thermal parameters of power MOSFETs that are placed on a common heat sink are analysed. The application of the indirect electrical method, the contact method, and the optical method in measuring self and mutual transient thermal impedances of these transistors is presented. The circuits that are required to perform measurements are presented and described. The errors of measurements are assessed for each of the considered methods. In the case of the indirect electrical method, an additional influence of the selection of a thermo-sensitive parameter and the function approximating thermometric characteristics on the measurement error are taken into consideration. The measurement results of the thermal parameters of the investigated transistors that were obtained using the considered measurement methods in various supply conditions are presented and discussed.

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Measurements and Computations of Internal Temperatures of the IGBT and the Diode Situated in the Common Case

Cited by 19 publications

References 30 publications

The Influence of Soldering Profile on the Thermal Parameters of Insulated Gate Bipolar Transistors (IGBTs)

The Influence of Soldering Profile on the Thermal Parameters of Insulated Gate Bipolar Transistors (IGBTs)

Accurate Circuit-Level Modelling of IGBTs with Thermal Phenomena Taken into Account

Selected Problems of Power MOSFETs Thermal Parameters Measurements

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