Measurements and Modeling of Thin Silicon Dioxide Films on Silicon

Kalnitsky, A.; Tay, Sing-Pin; Ellul, J. P.; Chongsawangvirod, S.; Andrews, J.W.; Irene, E. A.

doi:10.1149/1.2086373

Cited by 72 publications

(26 citation statements)

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“…However, the plot clearly establishes the dependence of growth rate on initial clean-up, making this critical for thin oxide films. The date presented on native oxides can be used to reduce the uncertainty using iterative techniques (Kalnitsky et al 1990) and to improve models for this film oxide growth.…”

Section: Resultsmentioning

confidence: 99%

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Chemical contamination of thin oxides and native silicon for use in modern device processing

Subramanian

Bhattacharya

Memon

1995

International Journal of Electronics

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The characterization of native oxide residuals and contaminants during the clean-up of silicon substrates prior to oxide growth is crucial for the development of accurate growth algorithms. Studies of contaminant concentrations based on Auger analysis are reported, showing carbon to be the critical contaminant. A critical etching time is established, for which carbon content and residual native oxide thickness are minimal. Variations in refractive index with etching period and native oxide thickness are also reported, showing an increase in refractive index with increase in native oxide thickness. These results should prove useful in improving the accuracy of ellipsometric techniques, and will aid in growth algorithm development.

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Section: Resultsmentioning

confidence: 99%

“…1975, Kalnitsky et al 1990, Kobeda and Irene 1988). These studies have identified the contaminants during hydrofluoric acid (HF) etching (Yang et a/.…”

Section: Introductionmentioning

confidence: 99%

Chemical contamination of thin oxides and native silicon for use in modern device processing

Subramanian

Bhattacharya

Memon

1995

International Journal of Electronics

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“…We consider the simulated ( and * data sets deduced by Kalnitsky et al 3 for an optical model of the layer Si structure. In this model, the SiO 2 /interface interface transition region between the layer and SiO 2 the Si substrate has been modelled as a graded index layer : the interface layer index varies exponentially n 3 along the interface layer thickness from a value closer to the substrate real index value to the bulk Ðlm SiO 2 index value of 1.46.…”

Section: Simulated Double-layer Data3mentioning

confidence: 99%

“…The ( and * values were generated in the above work3 for di †erent bulk oxide thicknesses with the following parameter values : n 2 (SiO 2 ) \ 1.46, at 6328 0.018 and ' \ 70¡. n 4 (Si Ó) \ 3.858 [ j Kalnitsky et al 3 have subsequently computed the Ðlm index and thickness from these simulated ( SiO 2 and * data by assuming a single-layer model without the interface layer and thus explain the increase in the Ðlm index (Table 1) for thinner Ðlms when the SiO 2 single-layer model is assumed. Some of these simulated ( and * data of the graded index structure with an interface layer thickness of 15 as well as the Ðlm Ó, index and thickness found3 by assuming the single-layer model, are given in Table 1.…”

Section: Simulated Double-layer Data3mentioning

confidence: 99%

Measurement of the interface layer thickness in SiO2/Si structures by single-wavelength null ellipsometry

Easwarakhanthan¹,

Alnot²

1998

Surf. Interface Anal.

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A procedure for the determination of the interface layer thickness between the bulk SiO2 film and the Si substrate from single‐wavelength null ellipsometric data is described. The effect of the angular errors in the angle of incidence is eliminated because it is found along with the film and interface layer thicknesses. Optimum film thickness ranges minimizing the propagation of angular errors in measured ellipsometric quantities are deduced from error analyses. Immersion ellipsometry is thus shown to reduce further the effect of these errors. A 10 Å interface layer can thus be determined within 10±2 Å under these conditions. The dominant uncertainty produced in the interface layer thickness obtained from the ellipsometric angles measured to one or a few hundredths of a degree under these conditions is only due to the inaccurate knowledge of the interface layer refractive index. A minimum thickness for the interface layer may be specified at a particular value of the refractive index irrespective of its real value. The procedure is illustrated regarding these results with determining the interface layer thickness from simulated and experimental data on SiO2/Si structures. © 1998 John Wiley & Sons, Ltd.

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“…Also in Figure 2 is shown the calculated spectral dependencies of the refractive index of bulk and thin film SiO 2 calculated using a single term Sellmeier approximation after Jellison'. Since n for thermally grown SiO 2 films is dependent on the thickness 6. ", the use of immersion liquids with different refractive indexes corresponding to the average refractive indexes of the films under investigation renders accuracy improvements possible.…”

Section: Introductionmentioning

confidence: 99%

A New Ellipsometry Technique for Interface Analysis: Application to Si-SiO2

Irene¹,

Yakovlev

1993

The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2

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DuOIc ,epori '; okr~en IQ,' tn. collection of ,nlornsation IS estimated to average i hsour we response. including the time for reviewin instructions. searching existing data W.urceS. 4A~heri.g inC n'iaIn.isg the data needeOd,Z.nd copleting ,I rev-e-ing the ollectiOn Of information. Send comments regarding this burden estimate or any other asoe:: at this collectIonc "orinatieft.-rcluoig sggeston fo reduc ,In hs burden. This document has been approved. for public release and sale, distribution of this document is unlimited. ABSTRACT (Maxcimum 200 words)in this paper we report a new spectroscopic elliPscrettxY technique that overccrnes michof he i~bguiy asocitedwit uesuring an interface under a f ilm. For this technique we match the refractive indiex of the overlayer with an irersion. liquid and then perform spectroscopic ellipsaitry at several angles of incidence. Essentially, the Overlayer is optically (not physically) removed, thereby rendering the ellipsarmetric measurement sensitive to the interfacial layer which is often liai to be optically and chenically different than either substrate or film. The si-SiO 2 interface resulting fran thermal oxidation Of Si, and the evolution Of the interface with annealing is studied using the new techni1que. ABSTRACTIn this paper we report a new spectroscopic ellipsometry technique that overcomes much of the ambiguity associated with measuring an interface under a film. For this technique we match the refractive index of the overlayer with an immersion liquid and then perform spectroscopic ellipsometry at several angles of incidence. Essentially, the overlayer is optically (not physically) removed, thereby rendering the ellipsometric measurement sensitive to the interfacial layer which is often known to be optically and chemically different than either substrate or film. The Si-SiO 2 interface resulting from thermal oxidation of Si, and the evolution of the interface with annealing is studied using the new technique.

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Measurements and Modeling of Thin Silicon Dioxide Films on Silicon

Cited by 72 publications

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Chemical contamination of thin oxides and native silicon for use in modern device processing

Chemical contamination of thin oxides and native silicon for use in modern device processing

Measurement of the interface layer thickness in SiO2/Si structures by single-wavelength null ellipsometry

A New Ellipsometry Technique for Interface Analysis: Application to Si-SiO2

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