Measurements and simulations of breakdown phenomena in a voltage-scalable smart power complementary BiCMOS process

Ryter, R.; Zingg, R.P.; Fichtner, W.

doi:10.1109/bipol.1994.587879

Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting

DOI: 10.1109/bipol.1994.587879

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Measurements and simulations of breakdown phenomena in a voltage-scalable smart power complementary BiCMOS process

R. Ryter¹,

R.P. Zingg²,

W. Fichtner³

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Measurements and simulations of breakdown phenomena in a voltage-scalable smart power complementary BiCMOS process

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