Measurements of Ga1-xAlxAs Layers on GaAs with EDS

Röhrbacher, Kurt; Klein, Peter; Andrae, Michael; Wernisch, J.

doi:10.1007/978-3-7091-6555-3_44

Cited by 2 publications

(3 citation statements)

References 3 publications

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“…This means that only one parameter is necessary to determine the shape of the distribution function of transmitted electrons: the most probable angle α MP . August adopted the constant value of 38°as a saturation value; the Monte Carlo calculations, however, revealed an atomic number dependence that leads to a new expression (for details see Andrae et al 1995): (10) A comparison of the new expression for the most probable angle with the experimental findings by Cosslett and Thomas and our Monte Carlo calculations is given in Andrae et al (1995).…”

Section: Correlation Of Angular Distributions: Transmitted Electronsmentioning

confidence: 95%

“…All necessary modifications, assumptions, simplifications, and extensions for all elements are discussed in detail in various papers (August and Wernisch 1989a,b;1990a,b,c;1991a,c). Some recent investigations show the good performance of this model regarding the determination of thin-film thicknesses and compositions in bulk samples (Pfeiffer 1995, Röhrbacher et al 1995. Figure 1 (adapted from August 1991a) shows a diagram of this model: the sample is sliced virtually along planes parallel to the sample's surface.…”

Section: Introductionmentioning

confidence: 99%

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New expressions for angular distributions

Klein¹,

Andrae²,

Röhrbacher³

et al. 1996

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Summary: An electron scattering model (multiple reflections) based on physical quantities only is refined and extended. New expressions for the most probable scattering angle, for the angular distribution of transmitted electrons, and for the angular distribution of backscattered electrons under oblique incidence, derived by fitting to already published data or to Monte Carlo results, are presented and compared with well-established formulae. The mean path-elongation factor for a multiple reflection model is calculated by introducing a correlation of angular distributions. The value of the new path elongation factor is compared with already existing fits.

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Section: Correlation Of Angular Distributions: Transmitted Electronsmentioning

confidence: 95%

Section: Introductionmentioning

confidence: 99%

New expressions for angular distributions

Klein¹,

Andrae²,

Röhrbacher³

et al. 1996

Scanning

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show abstract

“…Recent experiments showed that the mean deviation of thicknesses calculated with the applied multiple reflection model are about 11%. Measurements of GaAlAs on GaAs, which prove the applicability of this method to thickness determination, were reported by Röhrbacher et al (1996). Since charging in nonconducting materials modifies the shape of the depth distribution functions, the EPMA of insulators is difficult.…”

Section: Introductionmentioning

confidence: 93%

Calculation of concentration depth profiles in electron probe microanalysis

et al. 1997

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Summary: Based on a multiple reflection model, the concentration depth profiles of gold diffused into a silver substrate are determined. To conclude the structure of the sample from the measured intensity of radiation, an accurate correction procedure is necessary. A new model was developed for this purpose. Since the new electron probe microanalysis (EPMA) correction procedure is also valid for tilted samples, measurements with different geometries could be performed. The different angles of incidence and take-off angles allow for a better comparison of theory with experiment. One advantage of the applied multiple reflection model is that it can be extended comparatively easily with the analysis of layered specimens. Measurements of some specimens with one layer on a substrate are reported. The mean deviation of calculated thicknesses is about 10%. To calculate depth profiles, gold was evaporated with physical vapor deposition on silver foils. The thicknesses of evaporated gold films were 50 and 100 nm. Then the specimens were annealed at a temperature of approximately 400°C. Finally, the concentration depth profiles were quantified with EPMA. The shape of the profiles was derived from a simple diffusion model valid for the samples under consideration. To check the shape of the functions obtained, a comparison with measurements by secondary ion mass spectrometry was performed.

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Measurements of Ga1-xAlxAs Layers on GaAs with EDS

Cited by 2 publications

References 3 publications

New expressions for angular distributions

New expressions for angular distributions

Calculation of concentration depth profiles in electron probe microanalysis

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