Measurements of hardness, young s modulus, and fracture toughness of solar grade silicon obtained from metallurgical grade silicon

Abstract

Young modulus and toughness (K IC ) of bulk solar grade silicon (SoG-Si) obtained by directional solidification of metallurgical grade silicon were determined. The Young modulus was measured by the technique of impulse excitation of vibration and K IC was determined using the indentation method. Measurement values agree well with those available in the literature. The indentation method proved to be a reliable, relatively simple, inexpensive, and fast experimental method to measure K IC in SoG-Si.