Thin films of plasma polymerised linalyl acetate (PLA) were fabricated and their electrical properties investigated. The high frequency dielectric constant was determined using the split post dielectric resonator (SPDR) technique at frequencies of 10 GHz and 20 GHz and compared with the low frequency dielectric constant found from capacitive measurements of metal-insulator-metal (MIM) structures. Dielectric constants of 2.39 and 2.43 resulted from each of the respective techniques, in good agreement with each other. The J-V characteristics of MIM structures fabricated at various RF power levels were then investigated in order to determine the resistivity and DC conduction mechanism of the PLA thin films. From these data, the predominate mechanism of charge transport in the high voltage region was found to be consistent with Richardson-Schottky conduction, and the resistivity of the thin films found to increase with increasing RF power.