Measurements of Low Frequency Noise of Infrared Photo-Detectors with Transimpedance Detection System

Ciura, Łukasz; Kolek, Andrzej; Gawron, W.; Kowalewski, Andrzej; Stanaszek, Dariusz

doi:10.2478/mms-2014-0039

Cited by 20 publications

(13 citation statements)

References 16 publications

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“…has been published elsewhere [9]. It was shown that the power spectral density (PSD) of the system noise…”

Section: Resultsmentioning

confidence: 99%

“…The referenced Hg 1−x Cd x Te MWIR detectors were grown by metal organic chemical vapor deposition in VIGO System, S. A. laboratories. The architecture and fabrication details of the detectors have already been described [9]- [11]. The devices with different bandgap of the absorber related to Cd content x = 0.247 (specimen #1) and x = 0.321 (specimen #3) were used in the investigations.…”

Section: Samplesmentioning

confidence: 99%

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1/$f$ Noise in Mid-Wavelength Infrared Detectors With InAs/GaSb Superlattice Absorber

Ciura

Kolek

Wróbel

et al. 2015

IEEE Trans. Electron Devices

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The role of generation-recombination (g-r) and diffusion currents in the generation of 1/ f noise was investigated in mid-wavelength infrared detectors with InAs/GaSb superlattice (SL) absorber. Modeling of the dark current reveals the region where g-r and/or diffusion currents dominate over the leakage current (shunt-and/or trap-assisted tunneling). Measurements of 1/ f noise at constant reverse bias versus temperature show that noise intensity follows squared leakage current. There is no contribution to 1/ f noise from g-r or diffusion currents or it is too small to be observed. This property should be attributed to InAs/GaSb SL material rather than to device specific features, since the batch of examined devices contained specimens with various architecture, passivation method, and substrate. Results for SL-based devices were compared with the state-of-the-art HgCdTe detectors. In these detectors, dedicated for high operating temperature, correlation between g-r/diffusion currents and 1/ f noise is significant.Index Terms-1/f noise, infrared detectors, semiconductor device noise.

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“…has been published elsewhere [9]. It was shown that the power spectral density (PSD) of the system noise…”

Section: Resultsmentioning

confidence: 99%

Section: Samplesmentioning

confidence: 99%

1/$f$ Noise in Mid-Wavelength Infrared Detectors With InAs/GaSb Superlattice Absorber

Ciura

Kolek

Wróbel

et al. 2015

IEEE Trans. Electron Devices

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“…The setup used for low-frequency noise measurements and the small-signal equivalent circuit of a photodiode were described in Ref. [25]. In Figure 4a, power spectral densities measured at T = 200 K for the low and high bias voltages are shown.…”

Section: Noise Characteristicsmentioning

confidence: 99%

The Role of Noise in Specific Detectivity of InAs/GaSb Superlattice MWIR Bariodes

Czuba

Ciura

Sankowska

et al. 2021

Sensors

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In this paper, the results of the electrical, noise, and optical characterization of p-i-n and p-B-i-n diodes with AlSb and 4 ML AlSb/8 ML GaSb superlattice barriers in High-Operating Temperature conditions, are presented. Experimental and theoretical noise parameters were compared. Both dark current and noise analysis showed that the p-Bp_bulk-i-n bariode had the best performance. P-i-n photodiodes had the highest experimental value of specific detectivity (D*) of 6.16 × 109 Jones at 210 K and zero bias. At about −1 V reverse bias, the bariode with AlSb/GaSb electron barrier caught up to it and both devices achieved D* = (1–1.1) × 108 Jones. Further optimization of the superlattice-based electron barrier should result in the improvement of bariode performance at a smaller bias, at which better noise performance is more pronounced. It was shown that neglecting the low-frequency noise component can lead to a significant overestimation of detectivity. The simple method of incorporation of low-frequency noise contribution in the detectivity calculation, without time-consuming measurements, has been proposed.

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“…In most cases, LFNMs have employed general-purpose commercial instrumentation to target relatively high-impedance DUTs. However, the fast progress in semiconductors and new materials process technologies often results in the need to develop dedicated instrumentation and new methodologies for noise measurement and analysis [11][12][13]. Obtaining reliable noise characterization is especially challenging in the case of low-resistance DUTs (impedances below 10 Ω), and in these cases it is necessary to resort to a dedicated amplifier design and/or to the application of cross-correlation methods [14,15].…”

Section: Introductionmentioning

confidence: 99%

On the Use of Supercapacitors for DC Blocking in Transformer-Coupled Voltage Amplifiers for Low-Frequency Noise Measurements

et al. 2022

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When performing low-frequency noise measurements on low-impedance electron devices, transformer coupling can be quite effective in reducing the contribution of the equivalent input noise voltage of the preamplifier to the background noise of the system. However, noise measurements on electron devices are usually performed with a biased device under test. A bridge configuration must be used to null the DC component at the input of the transformer. Unfortunately, using a bridge results in a complication of the set-up and degradation of the system’s sensitivity because of the noise introduced by the nulling arm. We propose an alternative approach for blocking the DC component that exploits the fact that supercapacitors with capacitances in excess of a few Farads are nowadays easily available. Actual measurement results in conventional and advanced measurement configurations are discussed that demonstrate the advantages of the approach we propose.

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Measurements of Low Frequency Noise of Infrared Photo-Detectors with Transimpedance Detection System

Cited by 20 publications

References 16 publications

1/$f$ Noise in Mid-Wavelength Infrared Detectors With InAs/GaSb Superlattice Absorber

1/$f$ Noise in Mid-Wavelength Infrared Detectors With InAs/GaSb Superlattice Absorber

The Role of Noise in Specific Detectivity of InAs/GaSb Superlattice MWIR Bariodes

On the Use of Supercapacitors for DC Blocking in Transformer-Coupled Voltage Amplifiers for Low-Frequency Noise Measurements

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