Measurements of Random Telegraph Signal in CCDs Irradiated with Protons and Neutrons

Jay

Paillet

et al. 2020

The effect of gamma-ray and neutron radiations on the Variable Retention Time (VRT) phenomenon occurring in Dynamic Random Access Memory (DRAM) is studied. It is shown that both ionizing radiation and non-ionizing radiation induce VRT behaviors in DRAM cells. It demonstrates that both Si/SiO2 interface states and silicon bulk defects can be a source of VRT. It is also highlighted that radiation induced VRT in DRAMs is very similar to radiation induced Dark Current Random Telegraph Signal (DC-RTS) in image sensors. Both phenomena probably share the same origin but high magnitude electric fields seem to play an important role in VRT only. Defect structural fluctuations (without change of charge state) seem to be the root cause of the observed VRT whereas processes involving trapping and emission of charge carriers are unlikely to be a source of VRT. VRT also appears to be the most probable cause of intermittent stuck bits in irradiated DRAMs.

Section: E Evolution With Temperaturesupporting

confidence: 79%

Radiation-Induced Variable Retention Time in Dynamic Random Access Memories

Jay

Paillet

et al. 2020

“…As can be seen in the figure, this average value of 1200 e -/s fits well the CCD data, meaning that both CIS and CCD technologies share a common behavior regarding D d -induced RTS. The beginning of the experimental distribution exhibits an unexpected shape, but as this behavior was not observed in previous studies focusing on CCDs [4], [5], we are unable yet to draw any conclusion about this behavior.…”

Section: A Dc-rts In Charge Coupled Devicescontrasting

confidence: 75%

“…Experimental studies of radiation-induced DC-RTS in solidstate devices conducted over the past twenty years have led to numerous insights. Efforts were first focused on silicon imagers, especially on Charge-Coupled Devices (CCDs) and Charge Injection Devices (CIDs) [1]- [5], then on CMOS Image Sensors (CISs) [6], also called Active Pixel Sensors (APSs). In these studies, irradiations were mainly performed with protons, to be representative of the space radiation environment.…”

Section: Introductionmentioning

confidence: 99%

Dark Current Random Telegraph Signals in Solid-State Image Sensors

Virmontois

Robbins

et al. 2013

International audienceThis paper focuses on the Dark Current-Random Telegraph Signal (DC-RTS) in solid-state image sensors. The DC-RTS is investigated in several bulk materials, for different surface interfaces and for different trench isolation interfaces. The main parameter used to characterize the DC-RTS is the transition maximum amplitude which seems to be the most appropriate for studying the phenomenon and identifying its origin. Proton, neutron and Co-60 Gamma-ray irradiations are used to study DC-RTS induced by both Total Ionizing Dose (TID) and Displacement damage (Dd) dose. Conclusions are drawn by analyzing the correlation between the exponential slope of the transition maximum amplitude histogram and the location of the DC-RTS-induced defects. The presented results can be extrapolated to predict DC-RTS distributions in various kinds of solid state image sensors

“…The following RTS detection methods have been reported: visual counting [2], threshold based methods [4], [7], value histogram analysis [6], statistical properties analysis [10] and the non scattering pattern method (NSP) [11]. Tab.…”

Section: A Existing Rts Detection Methodsmentioning

confidence: 99%

Multilevel RTS in Proton Irradiated CMOS Image Sensors Manufactured in a Deep Submicron Technology

Hopkinson

Magnan

et al. 2009

A new automated method able to detect multi level random telegraph signals in pixel arrays and to extract their main characteristics is presented. The proposed method is applied to several proton irradiated pixel arrays manufactured using a 0.18 μm CMOS process dedicated to imaging. Despite the large proton energy range and the large fluence range used, similar exponential RTS amplitude distributions are observed. A universal mean amplitude is extracted from these distributions and the number of RTS defects appears to scale well with total NIEL. These conclusions allow the prediction of RTS amplitude distributions. The effect of electric field on RTS amplitude is also studied and no significant relation between electric field and RTS amplitude is observed. Index Terms-Random telegraph signal, RTS, proton irradiation, CMOS image sensors (CIS), active pixel sensors (APS).