Measurements of the atomistic mechanics of single crystalline silicon wires of nanometer width

Kizuka, Tokushi; Takatani, Yasuhiro; Asaka, Kinji; Yoshizaki, Ryozo

doi:10.1103/physrevb.72.035333

Cited by 139 publications

(141 citation statements)

References 65 publications

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“…A more in-depth stress study in [8] reveals that the uniaxial tensile stress/strain level for similar 2.0 lm long GAA Si nanowires can be up to 5.6 GPa/3.3% considering both in-plane and out-ofplane buckling using both top and tilted-view SEM micrographs. According to [9] and as expected from the buckling profile in the SEM micrograph in Fig. 3, such strained Si nanowires are in the elastic regime and therefore, no carrier degradation is expected due to no plastic deformation in the channel.…”

Section: Introductionsupporting

confidence: 60%

Accumulation-mode gate-all-around si nanowire nMOSFETs with sub-5nm cross-section and high uniaxial tensile strain

Najmzadeh¹,

Bouvet²,

Grabinski³

et al. 2012

Solid-State Electronics

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a b s t r a c tIn this work we report dense arrays of accumulation-mode gate-all-around Si nanowire nMOSFETs with sub-5 nm cross-sections in a highly doped regime. The integration of local stressor technologies (both local oxidation and metal-gate strain) to achieve P2.5 GPa uniaxial tensile stress in the Si nanowire is reported. The deeply scaled Si nanowire including such uniaxial tensile stress shows a low-field electron mobility of 332 cm 2 /V s at room temperature, 32% higher than bulk mobility at the equivalent high channel doping. The conduction mechanism as well as high temperature performance was studied based on the electrical characteristics from room temperature up to %400 K and a V TH drift of À1.72 mV/K and an ionized impurity scattering-based mobility reduction were observed.

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Section: Introductionsupporting

confidence: 60%

Accumulation-mode gate-all-around si nanowire nMOSFETs with sub-5nm cross-section and high uniaxial tensile strain

Najmzadeh¹,

Bouvet²,

Grabinski³

et al. 2012

Solid-State Electronics

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“…24. While these predictions have been observed in some experiments [67,[300][301][302][303], other experiments have found that regardless of boundary condition, the elastic properties of silicon nanowire-based NEMS show little difference from the elastic properties of the bulk materials [227,304,305].…”

Section: Surface Cauchy-born Model: Nanowire Resonatormentioning

confidence: 87%

Nanomechanical resonators and their applications in biological/chemical detection: Nanomechanics principles

et al. 2011

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Recent advances in nanotechnology have led to the development of nano-electro-mechanical systems (NEMS) such as nanomechanical resonators, which have recently received significant attention from the scientific community. This has not only been for their capability for the label-free detection of bio/chemical-molecules at single-molecule (or atomic) resolution for future applications such as the early diagnostics of diseases such as cancer, but also for their unprecedented ability to detect physical quantities such as molecular weight, elastic stiffness, surface stress, and surface elastic stiffness for adsorbed molecules on the surface. Most experimental works on resonator-based molecular detection have been based on the principle that molecular adsorption onto a resonator surface increases the effective mass, and consequently decreases the resonant frequencies of the nanomechanical resonator. However, this principle is insufficient to provide fundamental insights into resonator-based molecular detection at the nanoscale; this is due to recently proposed novel nanoscale detection principles including various effects such as surface effects, nonlinear oscillations, coupled resonance, and stiffness effects. Furthermore, these effects have only recently been incorporated into existing physical models for resonators, and therefore the universal physical principles governing nanoresonator-based detection have not been completely described. Therefore, our objective in this review is to overview the current attempts to understand the underlying mechanisms in nanoresonator-based detection using physical models coupled to computational simulations and/or experiments. Specifically, we will focus on issues of special relevance to the dynamic behavior of nanoresonators and their applications in biological/chemical detection: the resonance behavior of micro/nano-resonators; resonator-based chemical/biological detection; physical models of various nanoresonators such as nanowires, carbon nanotubes, and graphene. We pay particular attention to experimental and computational approaches that have been useful in elucidating the mechanisms underlying the dynamic behavior of resonators across multiple and disparate spatial/length scales, and the resulting insight into resonator-based detection that has been obtained. We additionally provide extensive discussion regarding potentially fruitful future research directions coupling experiments and simulations in order to develop a fundamental understanding of the basic physical principles that govern NEMS and NEMS-based sensing and detection applications.

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“…High-resolution transmission electron microscopy ͑HRTEM͒ enables us to observe the atomic configuration directly. [40][41][42][43][44][45][46][47][48][49][50] However, the electrical and mechanical properties of Pt ASWs have not been related directly to the atomic configuration observed by HRTEM.…”

Section: Introductionmentioning

confidence: 99%

Atomic configuration, conductance, and tensile force of platinum wires of single-atom width

Kizuka

Monna

2009

Phys. Rev. B

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Platinum ͑Pt͒ wires of single-atom width were produced by the retraction of a Pt nanotip from contact with a Pt plate at room temperature inside a transmission electron microscope. The distance between the nanotip and the plate was controlled using a conductance feedback system, as a result of which wires showing certain conductance values were observed continuously by in situ lattice imaging. Simultaneously, the force acting on the wires was measured using a function of atomic force microscopy. The tip-plate distance was also increased with a constant speed, and the atomic configuration, force, and conductance were similarly investigated. The single-atom-width Pt wires were found to exhibit straight shapes with an interatomic distance of 0.28Ϯ 0.03 nm. The wires were stable at a tensile force of approximately 1 nN; the observed interatomic distance resulted from elastic expansion. The present study demonstrated experimental evidence for the relationship between wire length and conductance; the wires extend from a three-atom length to a five-atom length as the selected feedback conductance decreases from 2.0 to 0.5G 0 ͑where G 0 =2e 2 / h, e being the charge of an electron and h Planck's constant͒. Contacts exhibiting a conductance of 3.0G 0 were two-atom-width contacts. In a conductance histogram constructed from the simple retraction, only one peak was observed at 1.3G 0 . Thus, it was found that the conductance of single-atom-width Pt wires is less than 3.0G 0 , with 1.3G 0 being that of the most-stable state.

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Measurements of the atomistic mechanics of single crystalline silicon wires of nanometer width

Cited by 139 publications

References 65 publications

Accumulation-mode gate-all-around si nanowire nMOSFETs with sub-5nm cross-section and high uniaxial tensile strain

Accumulation-mode gate-all-around si nanowire nMOSFETs with sub-5nm cross-section and high uniaxial tensile strain

Nanomechanical resonators and their applications in biological/chemical detection: Nanomechanics principles

Atomic configuration, conductance, and tensile force of platinum wires of single-atom width

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