Measurements of the Reaction−Diffusion Front of Model Chemically Amplified Photoresists with Varying Photoacid Size

Vogt, Bryan D.; Kang, Shuhui; Prabhu, Vivek M.; Lin, Eric K.; Satija, Sushil K.; Turnquest, Karen; Wu, Wen Li

doi:10.1021/ma061209l

Cited by 36 publications

(73 citation statements)

References 47 publications

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“…[ 31 ] trifl ic acid (Tf), perfl uorobutane sulfonic acid (PFBS) and perfl uorooctane sulfonic acid (PFOS). [ 34 ] At equal PEB temperatures and reaction time, the smaller photoacid induced a larger extent of reaction and spatial-extent from the ideal line-edge as shown in Figure 10 . While the average reaction extents may easily be measured by FTIR, the spatial-extent is missing.…”

Section: Reaction-diffusion Frontsmentioning

confidence: 94%

“…With this approach the composition profi les of PMAdMA, MA, and MAA were resolved. [34][35][36] Figure 7 a shows neutron refl ectivity data for PHOSt/ PMAdMA bilayers containing di-tert -butylphenyl iodonium perfl uorooctane sulfonate (DTBPI-PFOS) PAG in the acid-feeder layer offset as a function of PEB times at 130 ° C. The periodicity of the refl ectivity fringe wavelength and amplitude indicates the bilayer structure is composed of layers with distinct scattering length densities. The refl ectivity data fi ts are shown by the solid lines.…”

Section: Infl Uence Of Peb Reaction Timementioning

confidence: 99%

“…The dry trilayer sample was characterized by neutron refl ectivity on unexposed and post-exposure baked samples. [ 34 ] roughness ( σ R ). Hence, the zone of buried compositional roughness is not transferred to the resist.…”

Section: Contrast Variant Neutron Refl Ectivity At Solid/liquid Intermentioning

confidence: 99%

See 2 more Smart Citations

Photoresist Latent and Developer Images as Probed by Neutron Reflectivity Methods

Prabhu¹,

Kang²,

VanderHart³

et al. 2010

Advanced Materials

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Photoresist materials enable the fabrication of advanced integrated circuits with ever-decreasing feature sizes. As next-generation light sources are developed, using extreme ultraviolet light of wavelength 13.5 nm, these highly tuned formulations must meet strict image-fidelity criteria to maintain the expected performance gains from decreases in feature size. However, polymer photoresists appear to be reaching resolution limits and advancements in measurements of the in situ formed solid/solid and solid/liquid interface is necessary. This Review focuses on the chemical and physical structure of chemically amplified photoresists at the lithographic feature edge at length scales between 1 nm and 100 nm. Neutron reflectivity measurements provide insight into the nanometer-scale composition profiling of the chemical latent image at an ideal lithographic line-edge that separates optical resolution effects from materials processing effects. Four generations of advanced photoresist formulations were examined over the course of seven years to quantify photoresist/photoacid and photoresist/developer interactions on the fidelity of lithographic features. The outcome of these measurements complement traditional resist design criteria by providing the effects of the impacts of the photoresist and processing on the feature fidelity. These physical relations are also described in the context of novel resist architectures under consideration for next-generation photolithography with extreme-ultraviolet radiation.

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Section: Reaction-diffusion Frontsmentioning

confidence: 94%

Section: Infl Uence Of Peb Reaction Timementioning

confidence: 99%

See 1 more Smart Citation

Photoresist Latent and Developer Images as Probed by Neutron Reflectivity Methods

Prabhu¹,

Kang²,

VanderHart³

et al. 2010

Advanced Materials

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“…The primary advantage of this bilayer approach is that only one diffusion media is present. This approach is more convenient than previous double spin coating methods, which do provide high fidelity bilayers, but have severe limitations on finding suitable casting solvents and acid feeder layers that do not share the same polymer media as the bottom layer [3][4][5] . The PDMS method forms an interface between two identical polymer layers.…”

Section: Sample Preparation and Instrumentationmentioning

confidence: 99%

A comparison of the reaction-diffusion kinetics between model-EUV polymer and molecular-glass photoresists

Kang

Lavery

Choi

et al. 2008

Advances in Resist Materials and Processing Technology XXV

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It has been recently postulated that sub-22 nm photolithography with polymeric photoresists has reached a materials design barrier due to its large molecular mass and distribution. In this argument, the "pixel" size, which is related to the smallest molecular unit, determines the feature fidelity and resolution of the lithographic process. This hypothesis remains unproven, but molecular glass photoresists can provide a test because they can share similar chemical functionality to polymer resists, but with low molecular mass and a monodisperse molecular mass distribution. The low molecular mass leads to the smaller pixel size compared to the radius of gyration of the polymer photoresist. In this work, we compare the deprotection reaction-diffusion kinetics of a common photoacid generator in a polymer and molecular glass resist with similar resist chemistry to elucidate effects of molecular architecture on photoresist performance. We determine the mechanism of reaction, photoacid trapping behavior, and diffusivity by measuring and comparing the reaction kinetics parameters as a function of temperature and exposure dose. These results permit an analysis of the latent image formation which is a crucial factor in resolution and line-edge roughness. Further, knowledge of the reaction-diffusion parameters of each type of resist provides a quantitative approach to predict linespace features, crucial for design for resolution-enhancement features.

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“…. [17][18][19][20][21][22] Monitoring the by-products of reactions that occur in the photoresist can provide a new platform to study both acid yields from PAG's as well as acid-catalyzed deprotection mechanisms in the photoresist within the same experimental configuration. By focusing on the signatures produced by specific masses released from the photoresist during and following EUV exposure, important chemistries occurring in the photoresist can be inferred.…”

Section: Introductionmentioning

confidence: 99%

Mass spectrometer characterization of reactions in photoresists exposed to extreme ultraviolet radiation

et al. 2011

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The development of resists that meet the requirements for resolution, line edge roughness and sensitivity remains one of the challenges for extreme ultraviolet (EUV) lithography. Two important processes that contribute to the lithographic performance of EUV resists involve the efficient decomposition of a photoacid generator (PAG) to yield a catalytic acid and the subsequent deprotection of the polymer in the resist film. We investigate these processes by monitoring the trends produced by specific masses outgassing from resists following EUV exposure and present our initial results. The resists tested are based on ESCAP polymer and either bis(4-tert-butylphenyl)iodonium perfluoro-1-butanesulfonate or bis(4-tert-butylphenyl)iodonium triflate. The components originating from the PAG were monitored at various EUV exposure doses while the deprotection of the polymer was monitored by baking the resist in vacuum and detecting the cleaved by-product from the polymer with an Extrel quadruple mass spectrometer.

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Measurements of the Reaction−Diffusion Front of Model Chemically Amplified Photoresists with Varying Photoacid Size

Cited by 36 publications

References 47 publications

Photoresist Latent and Developer Images as Probed by Neutron Reflectivity Methods

Photoresist Latent and Developer Images as Probed by Neutron Reflectivity Methods

A comparison of the reaction-diffusion kinetics between model-EUV polymer and molecular-glass photoresists

Mass spectrometer characterization of reactions in photoresists exposed to extreme ultraviolet radiation

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