2015
DOI: 10.1103/physrevb.91.195426
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Measurements of the transport gap in semiconducting multiwalled carbon nanotubes with varying diameter and length

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Cited by 11 publications
(16 citation statements)
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“…Three-terminal conductance measurements are performed by applying dc voltages (V DS ) from a voltage source (Yokogawa) to the AD-MWNT device electrodes and measuring the current (I) using a low noise current amplifier (Ithaco). 9 The samples were cooled to 4.2 K in a bath cryostat. The current was kept below 1 μA to avoid self-heating and damage to samples.…”
Section: Methodsmentioning
confidence: 99%
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“…Three-terminal conductance measurements are performed by applying dc voltages (V DS ) from a voltage source (Yokogawa) to the AD-MWNT device electrodes and measuring the current (I) using a low noise current amplifier (Ithaco). 9 The samples were cooled to 4.2 K in a bath cryostat. The current was kept below 1 μA to avoid self-heating and damage to samples.…”
Section: Methodsmentioning
confidence: 99%
“…In practice, all the samples have a maximum conductance at negative gate voltages. 9 Using the vocabulary of transistor devices, this corresponds to the minimum On-state resistance R MIN of the device. In metallic or quasimetallic samples, though, the conductance variation is almost negligible.…”
Section: Conductance Measurementsmentioning
confidence: 99%
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“…In electronic transport, a low level of defects enables a large mean free path, and thus ballistic transport. Quasiballistic transport has been observed only in the arcdischarge grown MWNTs [2,3], while in CVD-grown tubes conduction has been found to be close to strong localization [4]. Nanomechanical properties have also been directly compared in measurements [5], where the Youngs modulus in CVD-MWNTs was found greatly inferior compared to that of AD-MWNTs.…”
Section: Introductionmentioning
confidence: 99%