Measurements of Unity Gain Cutoff Frequency and Saturation Velocity of a GaN HEMT Transistor

Oxley, C. H.; Uren, Michael J.

doi:10.1109/ted.2004.842719

Cited by 66 publications

(25 citation statements)

References 14 publications

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“…The short circuit current‐gain ( h 21 ) represents an important figure of merit for evaluating the performance for microwave field effect transistors. As a matter of fact, this parameter is conventionally exploited for determining the unity current‐gain cut‐off frequency ( f T ), which is used for roughly estimating the upper frequency limit of the device operation [1–6]. The parameter h 21 should roll off with a slope of −20 dB/dec; nevertheless, deviations from this ideal behavior can be observed, especially at high frequencies.…”

Section: Introductionmentioning

confidence: 99%

A clear‐cut understanding of the current‐gain peak in HEMTs: Theory and experiments

Crupi

Raffo

Schreurs

et al. 2012

Micro & Optical Tech Letters

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The aim of this article is to provide a clear‐cut understanding of the origin of the current‐gain peak (CGP) affecting the microwave behavior of high electron mobility transistors (HEMTs). This effect consists of a sudden increase of the magnitude of the short circuit current‐gain at a given value of the frequency. The present study demonstrates that the CGP can be attributed to the resonance associated to the transition from a capacitive to an inductive behavior of the open circuit output impedance, as confirmed through an extensive experimental analysis. In particular, the CGP is analyzed in HEMT devices based on both GaAs and GaN technologies and its appearance is investigated with respect to the gate width, bias condition, and ambient temperature. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:2801–2806, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27192

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Section: Introductionmentioning

confidence: 99%

A clear‐cut understanding of the current‐gain peak in HEMTs: Theory and experiments

Crupi

Raffo

Schreurs

et al. 2012

Micro & Optical Tech Letters

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“…Following in the tradition of Eastman et al [270], in 2005 Oxley and Uren [271] found a saturation electron drift velocity of about 1:1 Â 10 7 cm/s for the case of wurtzite GaN. The role of self-heating was also probed by Oxley and Uren [271] and shown to be relatively insignificant. It should be noted, however, that a completely satisfactory explanation for the discrepancy between these experimental results and those of the Monte Carlo simulations has yet to be provided.…”

Section: Electron Transport Within Gan: a Reviewmentioning

confidence: 88%

A 2015 perspective on the nature of the steady-state and transient electron transport within the wurtzite phases of gallium nitride, aluminum nitride, indium nitride, and zinc oxide: a critical and retrospective review

Siddiqua

Hadi

Shur

et al. 2015

J Mater Sci: Mater Electron

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Wide energy gap semiconductors are broadly recognized as promising materials for novel electronic and optoelectronic device applications. As informed device design requires a firm grasp of the material properties of the underlying electronic materials, the electron transport that occurs within the wide energy gap semiconductors has been the focus of considerable study over the years. In an effort to provide some perspective on this rapidly evolving and burgeoning field of research, we review analyzes of the electron transport within some wide energy gap semiconductors of current interest in this paper. In order to narrow the scope of this review, we will primarily focus on the electron transport that occurs within the wurtzite phases of gallium nitride, aluminum nitride, indium nitride, and zinc oxide in this review, these materials being of great current interest to the wide energy gap semiconductor community; indium nitride, while not a wide energy gap semiconductor in of itself, is included as it is often alloyed with other wide energy gap semiconductors, the resultant alloys being wide energy gap semiconductors themselves. The electron transport that occurs within zinc-blende gallium arsenide is also considered, albeit primarily for bench-marking purposes. Most of our discussion will focus on results obtained from our ensemble semi-classical three-valley Monte Carlo simulations of the electron transport within these materials, our results conforming with state-of-the-art wide energy gap semiconductor orthodoxy. A brief tutorial on the Monte Carlo electron transport simulation approach, this approach being used to generate the results presented herein, is also provided. Steady-state and transient electron transport results are presented. The evolution of the field, and a survey of the current literature, are also featured. We conclude our review by presenting some recent developments on the electron transport within these materials.

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“…The cut-off frequency is related to the average carrier velocity in a two-dimensional electron gas (2DEG) channel. The experimental reports show that the room temperature electron velocity values in GaN-based 2DEG channels lie between (1-3)×10 7 cm/s [3][4][5][6][7][8][9]. While the low-field electron mobility tends to decrease as the density of 2DEG increases, the high-field drift velocity is not a monotonous function of the density [10].…”

Section: Introductionmentioning

confidence: 99%

Electron transport in a coupled GaN/AlN/GaN channel of nitride HFET

Ardaravičius¹,

Kiprijanovič²,

Liberis³

2017

Lith. J. Phys.

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Longitudinal hot-electron transport is investigated for the alloy-free AlGaN/AlN/{GaN/AlN/GaN} heterostructure at electric fields up to 380 kV/cm. The structure featured a coupled channel with a camelback electron density profile. The hot-electron drift velocity in the coupled channel is estimated as ~1.5×10 7 cm/s and is ~50% higher as compared with the standard AlN-spacer GaN 2DEG channel. The HFET with the pristine 2DEG density of 1.75×1013 cm -2 confined in the coupled channel demonstrates the optimal frequency performance in terms of electron velocity at a relatively low gate bias of V GS = -1.75 V. These results are consistent with the ultra-fast decay of hot phonons.

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Measurements of Unity Gain Cutoff Frequency and Saturation Velocity of a GaN HEMT Transistor

Cited by 66 publications

References 14 publications

A clear‐cut understanding of the current‐gain peak in HEMTs: Theory and experiments

A clear‐cut understanding of the current‐gain peak in HEMTs: Theory and experiments

A 2015 perspective on the nature of the steady-state and transient electron transport within the wurtzite phases of gallium nitride, aluminum nitride, indium nitride, and zinc oxide: a critical and retrospective review

Electron transport in a coupled GaN/AlN/GaN channel of nitride HFET

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