Measurements on the conductivity of copper coating with resonant cavity

Yue, Shiqiang; Tian, Saike; Wang, Na; Xin, Tianmu; Wang, JQ; Xu, Gang

doi:10.1007/s41605-023-00384-2

Cited by 2 publications

(1 citation statement)

References 14 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The system comprises an aluminum alloy resonant cavity, a vector network analyzer, and a resonant cavity coupling device. Two microwave coupling lines are linked to the electromagnetic field within the cavity in a loop coupling manner, which is connected to the network analyzer as the input and output for the microwave signals, respectively [ 27 ]. The subsequent section will elaborate on the methodology used to derive the RF conductivity of the material employing the dielectric resonant cavity system.…”

Section: Experimental Methodsmentioning

confidence: 99%

Radio-Frequency Conductivity Characteristics and Corresponding Mechanism of Graphene/Copper Multilayer Structures

Guo,

Song,

et al. 2024

Materials

View full text Add to dashboard Cite

High-radio-frequency (RF) conductivity is required in advanced electronic materials to reduce the electromagnetic loss and power dissipation of electronic devices. Graphene/copper (Gr/Cu) multilayers possess higher conductivity than silver under direct current conditions. However, their RF conductivity and detailed mechanisms have rarely been evaluated at the micro scale. In this work, the RF conductivity of copper–copper (P-Cu), monolayer-graphene/copper (S-Gr/Cu), and multilayer-graphene/copper (M-Gr/Cu) multilayer structures were evaluated using scanning microwave impedance microscopy (SMIM) and dielectric resonator technique. The results indicated that the order of RF conductivity was M-Gr/Cu < P-Cu < S-Gr/Cu at 3 GHz, contrasting with P-Cu < M-Gr/Cu < S-Gr/Cu at DC condition. Meanwhile, the same trend of M-Gr/Cu < P-Cu < S-Gr/Cu was also observed using the dielectric resonator technique. Based on the conductivity-related Drude model and scattering theory, we believe that the microwave radiation can induce a thermal effect at S-Gr/Cu interfaces, leading to an increasing carrier concentration in S-Gr. In contrast, the intrinsic defects in M-Gr introduce additional carrier scattering, thereby reducing the RF conductivity in M-Gr/Cu. Our research offers a practical foundation for investigating conductive materials under RF conditions.

show abstract

Section: Experimental Methodsmentioning

confidence: 99%