Measuring Holding Voltage Related to Homogeneous Current Flow in Wide ESD Protection Structures Using Multilevel TLP

Trap‐Related Breakdown and Filamentary Conduction in Carbon Doped GaN

“…The introductory part of ref. explains concisely the formation and branches of filamentary I – V curves.…”

“…As a consequence the on‐ and off‐state regions with respective high and low current densities can eventually separate, giving rise to a CF. For extended systems where the active region with S‐shape J – V characteristics is directly embedded in between two equipotential planes, the filamentary I – V characteristics shows one stable vertical I – V branch and two unstable branches, see Figure a. The vertical I – V branch occurs at so‐called coexistence voltage (10(a)), common for the whole device, where the on‐state (i.e.…”

Improved current filament control during Zener diode zapping

“…This difference in the Vak drop is also indicative of the filament width. A more focalized current event is usually related to a more pronounced voltage drop as it has been observed in ESD protection structures [9]. The beneficial effect of the new Zener in avoiding current bifurcation is demonstrated in Fig.…”

“…8c. in the sense that, from the resistance point of view, the current bifurcation in the conventional Zener acts as a wider current filament and, as a result, a strong snapback is avoided [9].…”