2009
DOI: 10.1116/1.3253475
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Measuring interface electrostatic potential and surface charge in a scanning electron microscope

Abstract: A novel method for electrostatic potential measurements at the interface is described. It involves placing a two-dimensional grid below the sample and observing it in a scanning electron microscope. Primary electron beam displacement, caused by surface charges, can be then measured for every grid knot. Using geometric parameters of the setup, a quantitative mapping of the potential can be extracted. It is shown that this method can achieve a tens of millivolt sensitivity and a submicron spatial resolution in e… Show more

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Cited by 3 publications
(2 citation statements)
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“…Although contrast mechanisms for the SE collection are undoubtedly due to multiple factors, and are not fully understood, they have been shown to include an influence of the surface potential [12][13][14]. By collecting images for varying values of Vrev, the change in surface potential with Vrev can be identified.…”
Section: Resultsmentioning
confidence: 98%
“…Although contrast mechanisms for the SE collection are undoubtedly due to multiple factors, and are not fully understood, they have been shown to include an influence of the surface potential [12][13][14]. By collecting images for varying values of Vrev, the change in surface potential with Vrev can be identified.…”
Section: Resultsmentioning
confidence: 98%
“…At the same time, electrostatic charging from beam absorption is commonly observed in routine electron microscopy, especially for dielectric and poorly grounded conducting samples. 34 The rate and extent of charge accumulation should dictate the time dependence and magnitude of potential changes. Since the majority of the e − beam is either transmitted or scattered (elastic & inelastic), 30 the amount of excess charge accumulated at the working electrode under the beam is unknown, making quantitative analysis of the OCP changes speculative at this juncture.…”
Section: Influence Of the Ementioning
confidence: 99%