Measuring junction temperature of GaAs solar cells using pulse-width modulation photoluminescence

Yang, Miin-Shen; Liao, Wen-Chia; Shu, G. W.; Liu, Y. K.; Shen, Ji Lin; Wu, Cheng‐Hsien; Chou, Wu–Ching; Lee, Y. C.

doi:10.1016/j.ssc.2010.04.004

Cited by 4 publications

(2 citation statements)

References 14 publications

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“…Experimentally, the so-called photoluminescence technique was used to measure the junction temperature of the solar cells [8]. The junction temperature of the Mono-crystalline Si photovoltaic cell was estimated empirically through the measured output voltage of the cell and ambient temperature [9].…”

Section: Introductionmentioning

confidence: 99%

Thermal analysis on multijunction photovoltaic cell under oblique incident laser irradiation

Peng

Huang

2017

Energy

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Laser beam irradiation was modeled to investigate the thermal responses of multijunction photovoltaic cell to the irradiation of oblique incident monochromatic light. First, the monochromatic light absorption in multijunction photovoltaic cell is formulated with accounting for multiple reflections as well as interferences. Then, an iterative algorithm was established to calculate the depositions of incident laser energy in every layer. Finally, the temperature characteristics of the photovoltaic cell are analyzed with finite element method.

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Section: Introductionmentioning

confidence: 99%

Thermal analysis on multijunction photovoltaic cell under oblique incident laser irradiation

Peng

Huang

2017

Energy

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“…Very recently, we have introduced a technique for measuring the junction temperature of GaAs solar cells using photoluminescence (PL). 13) This technique measures the PL under the pulse width modulation of excitation laser. The junction temperature was determined by the calibration of the temperature-dependent PL and/or the fit of the high-energy tail in PL.…”

Section: Introductionmentioning

confidence: 99%

Measuring the Junction Temperature of GaInP/GaInAs/Ge Multijunction Solar Cells Using Photoluminescence

Shu

Tung

et al. 2011

Jpn. J. Appl. Phys.

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The junction temperatures of the three individual subcells of InGaP/InGaAs/Ge solar cells were measured using photoluminescence (PL) with three different excitation lasers. With the illumination of an extra xenon-mercury lamp, the linear relationship between the PL energy and the illumination level is clearly observed and advantageously used for deriving the junction temperature. Using the Varshni relationship between the PL peak energy and the heat-sink temperature allows us to determine the junction temperature in each subcell.

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Cell-Temperature Determination in InGaP–(In)GaAs–Ge Triple-Junction Solar Cells

Yang

Wei

et al. 2011

IEEE Electron Device Lett.

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Measuring junction temperature of GaAs solar cells using pulse-width modulation photoluminescence

Cited by 4 publications

References 14 publications

Thermal analysis on multijunction photovoltaic cell under oblique incident laser irradiation

Thermal analysis on multijunction photovoltaic cell under oblique incident laser irradiation

Measuring the Junction Temperature of GaInP/GaInAs/Ge Multijunction Solar Cells Using Photoluminescence

Cell-Temperature Determination in InGaP–(In)GaAs–Ge Triple-Junction Solar Cells

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Measuring junction temperature of GaAs solar cells using pulse-width modulation photoluminescence

Cited by 4 publications

References 14 publications

Thermal analysis on multijunction photovoltaic cell under oblique incident laser irradiation

Thermal analysis on multijunction photovoltaic cell under oblique incident laser irradiation

Measuring the Junction Temperature of GaInP/GaInAs/Ge Multijunction Solar Cells Using Photoluminescence

Cell-Temperature Determination in InGaP&#x2013;(In)GaAs&#x2013;Ge Triple-Junction Solar Cells

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Cell-Temperature Determination in InGaP–(In)GaAs–Ge Triple-Junction Solar Cells