Measuring minority-carrier diffusion length using a Kelvin probe force microscope

Shikler, Rafi; Fried, N.; Meoded, T.; Rosenwaks, Y.

doi:10.1103/physrevb.61.11041

Cited by 48 publications

(30 citation statements)

References 17 publications

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“…Because SPV measurements with either STM or AFM have yet to be applied in a spectroscopic mode, we shall not dwell on this issue further here. However, the recent STM-and AFM-based SPV research of the groups of Haase 31 and Rosenwaks, 32 respectively, clearly demonstrates the potential of these tools.…”

Section: 27mentioning

confidence: 97%

Surface photovoltage spectroscopy of semiconductor structures: at the crossroads of physics, chemistry and electrical engineering

Kronik

Shapira

2001

Surface & Interface Analysis

409

267

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The possibility of obtaining a detailed picture of the electronic structure makes surface photovoltage spectroscopy (SPS) eminently suitable for bridging the gap between the chemical, physical, optical and electrical properties of semiconductors. In SPS, changes in band bending (both at the free semiconductor surface and at buried interfaces) are monitored as a function of external illumination. Surface photovoltage spectroscopy can provide detailed, quantitative information on bulk properties (e.g. bandgap and type, carrier diffusion length and lifetime) and can be used for complete construction of surface and interface band diagrams, including the measurement of energy levels in quantum structures. A particular strength is that a comprehensive analysis of surface and bulk defect state distributions and properties is made possible. Measurements using SPS are contactless and non-destructive. In addition, they can be performed both in situ and ex situ, at any reasonable temperature, on any semiconducting material, at any ambient and at any lateral resolution down to the atomic scale. This review starts with an overview of SPS-related surface and interface theory, describes the SPS experimental set-up and presents applications for surface and interface characterization of a wide variety of materials and structures, cross-correlating them with other methodologies.

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Section: 27mentioning

confidence: 97%

Surface photovoltage spectroscopy of semiconductor structures: at the crossroads of physics, chemistry and electrical engineering

Kronik

Shapira

2001

Surface & Interface Analysis

409

267

View full text Add to dashboard Cite

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“…8). [53] KPFM measurements have also been performed on quantum dots, [54,55] quantum wells under illumination, [56] laser diodes, [57] nanotubes, [58,59] and chemically sensitive field-effect transistors. [60] This technique permitted the measurement of the size dependence of the work function for different nanostructures, such as multi-walled nanotubes, [61] and the charging behavior of dots.…”

Section: Kpfm Of Conventional Inorganic Materialsmentioning

confidence: 99%

“…[51] Another very interesting application of KPFM has been the measurement of minority-carrier diffusion length in conventional semiconductors. [52,53] The method is based on the study of the surface photoinduced voltage between the SFM tip and the surface of an illuminated semiconductor p-n junction. The photogenerated carriers diffuse to the junction and change the voltage difference between the tip and the sample as a function of the horizontal distance from the p-n junction.…”

Section: Kpfm Of Conventional Inorganic Materialsmentioning

confidence: 99%

Electronic Characterization of Organic Thin Films by Kelvin Probe Force Microscopy

2006

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This review highlights the potential of Kelvin probe force microscopy (KPFM) beyond imaging to simultaneously study structural and electronic properties of functional surfaces and interfaces. This is of paramount importance since it is well established that a solid surface possesses different properties than the bulk material. The versatility of the technique allows one to carry out investigations in a non‐invasive way for different environmental conditions and sample types with resolutions of a few nanometers and some millivolts. KPFM can be used to acquire a wide knowledge of the overall electronic and electrical behavior of a sample surface. Moreover, by KPFM it is possible to study complex electronic phenomena in supramolecular engineered systems and devices. The combination of such a methodology with external stimuli, e.g., light irradiation, opens new doors to the exploration of processes occurring in nature or in artificial complex architectures. Therefore, KPFM is an extremely powerful technique that permits the unraveling of electronic (dynamic) properties of materials, enabling the optimization of the design and performance of new devices based on organic‐semiconductor nanoarchitectures.

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“…Moreover it provides quantitative insight into other electronic properties of the investigated architecture including the work function, band bending and electrical polarization. This technique has been successfully utilized to cast light onto mesoscopic systems as organic and inorganic thin films [10] and proteins. [11] With the decreasing size of the investigated objects (i.e., smaller than about 100 nm), the measured SP features an apparent variation, which is due to the limit brought into play by the physical principle governing the KPFM imaging, and consequently also to the size of the probing KPFM tip.…”

Section: Introductionmentioning

confidence: 99%

Probing Local Surface Potential of Quasi‐One‐Dimensional Systems: A KPFM Study of P3HT Nanofibers

Liscio

Palermo

Samorı́

2008

Adv Funct Materials

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A new model for the quantitative analysis of Kelvin Probe Force Microscopy (KPFM) measurements of quasi‐one‐dimensional systems is presented. It is applied to precisely determine the local surface potential (SP) of semiconducting nanofibers of poly(3‐hexylthiophene) (P3HT) self‐assembled on various flat substrates. To study these quasi‐one dimensional objects, the effective area has been defined. This parameter represents the area of sample surface interacting with the KPFM probe and it plays a crucial role in the estimation of the SP of nanofibers having a cross‐section comparable to the apical diameter of the tip, i.e., 20 nm. Therefore our model makes it possible to gain quantitative insight into nano‐systems smaller than 20 nm. In particular, through the estimation of the effective area, it allows to determine the local surface potential of single nanofiber as well as to simulate the KPFM image of nano‐assemblies adsorbed both on electrically insulating and conducting substrates. This versatile model represents a useful tool to study with a high degree of precision the surface potential characteristics of nanowires paving the way towards their use as building blocks for the fabrication of electronic nanodevices with improved performance.

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Measuring minority-carrier diffusion length using a Kelvin probe force microscope

Cited by 48 publications

References 17 publications

Surface photovoltage spectroscopy of semiconductor structures: at the crossroads of physics, chemistry and electrical engineering

Surface photovoltage spectroscopy of semiconductor structures: at the crossroads of physics, chemistry and electrical engineering

Electronic Characterization of Organic Thin Films by Kelvin Probe Force Microscopy

Probing Local Surface Potential of Quasi‐One‐Dimensional Systems: A KPFM Study of P3HT Nanofibers

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