2017
DOI: 10.1557/jmr.2017.173
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Measuring optical properties of individual SnO2 nanowires via valence electron energy-loss spectroscopy

Abstract: Abstract

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Cited by 6 publications
(3 citation statements)
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“…It can be observed in this curve that the bulk plasmon is located at 21.4 eV. A linear fit up to the x-axis in the energy loss function (ELF) suggests an Eg of 3.6 eV (panel b) which agrees with the value reported in the literature [4]. Panel c exhibits the complex dielectric function, ɛ1, ɛ2, and the ELF.…”
supporting
confidence: 87%
“…It can be observed in this curve that the bulk plasmon is located at 21.4 eV. A linear fit up to the x-axis in the energy loss function (ELF) suggests an Eg of 3.6 eV (panel b) which agrees with the value reported in the literature [4]. Panel c exhibits the complex dielectric function, ɛ1, ɛ2, and the ELF.…”
supporting
confidence: 87%
“…Metal oxide nanostructures have been extensively characterized using the high spatial resolution techniques of STEM VEELS [1] and STEM-CL [2] demonstrating the ability to directly characterize the band structure of nanoheterostructures and the complex mid-gap defect states present in SnO 2 nanomaterials ( Fig. 1).…”
Section: Metal Oxide Nanostructure Characterizationmentioning
confidence: 99%
“…Perhaps the most significant advantage of STEM-CL over SEM-CL is that it can simultaneously utilize the entire suite of analytical electron microscopy tools present on a microscope to collect crystal orientation, elemental mapping, local bonding environment, and dielectric properties all on a single nanoparticle. 48 The interfacial band bending often cited as a determinant mechanism for unique or improved sensor behavior is rarely measured. X-ray photoelectron spectroscopy has shown promise in measuring Fermi energy, conduction band and valence band offset in nano-heterostructures in vacuum.…”
Section: Introductionmentioning
confidence: 99%