2022
DOI: 10.1088/2516-1083/ac851c
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Measuring outdoor I–V characteristics of PV modules and systems

Abstract: The cumulative installed capacity of photovoltaics has passed 1 TW, of which about two-thirds were only installed in the past five years. Many of these new installations incorporate novel module and cell designs that have not yet been subjected to long-term in-field characterization. Indoor accelerated stress testing has historically been a valuable methodology to identify fault mechanisms, estimate degradation rates, and to ensure the safety and normal operation of modules in the field. Still, these methodolo… Show more

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Cited by 4 publications
(3 citation statements)
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References 118 publications
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“…In Figure 12c, V oc keeps almost constant as R s increases while J sc decreases continuously. The single diode equivalent current of the DPSC can interpret these trends ( Figure ), which can be described by the following equations: [ 108,122 ] J=JnormalLJnormalDJnormalPJ=JnormalLJ0(eq(V+JRnormals)AKT1)(V+JRnormals)Rshwhere J L is the photogenerated current, J D is the diode current, J P is the shunt current, J 0 is the reverse bias saturation current, A is the diode ideality factor, R s and R sh are the inherent series and shunt resistances in the cell. By bringing the open‐circuit condition ( V = V oc , J = 0) and the short‐circuit condition ( V = 0, J = J sc ) into Equation (), the following equations are obtainedJnormalL=J0(eqVocAKT1)+VocRshJnormalL=Jsc+J0(eqJscRnormalsAKT1)+JscRnormalsRsh…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…In Figure 12c, V oc keeps almost constant as R s increases while J sc decreases continuously. The single diode equivalent current of the DPSC can interpret these trends ( Figure ), which can be described by the following equations: [ 108,122 ] J=JnormalLJnormalDJnormalPJ=JnormalLJ0(eq(V+JRnormals)AKT1)(V+JRnormals)Rshwhere J L is the photogenerated current, J D is the diode current, J P is the shunt current, J 0 is the reverse bias saturation current, A is the diode ideality factor, R s and R sh are the inherent series and shunt resistances in the cell. By bringing the open‐circuit condition ( V = V oc , J = 0) and the short‐circuit condition ( V = 0, J = J sc ) into Equation (), the following equations are obtainedJnormalL=J0(eqVocAKT1)+VocRshJnormalL=Jsc+J0(eqJscRnormalsAKT1)+JscRnormalsRsh…”
Section: Resultsmentioning
confidence: 99%
“…In Figure 12c, V oc keeps almost constant as R s increases while J sc decreases continuously. The single diode equivalent current of the DPSC can interpret these trends (Figure 13), which can be described by the following equations: [108,122] J ¼ J L À J D À J P (13)…”
Section: Optimization Of Parasitic Resistancementioning
confidence: 99%
“…The proposed device can be described by a single‐diode equivalent circuit model, as shown in Figure 13c, and governed by Equation (9) and (10). [ 62,63 ] In this model, the diode current accounts for recombination losses in the bulk, while the second diode is neglected due to low recombination at both the absorber/ETL and HTL/absorber interfaces, as demonstrated in Figure 7b and 10b.J=JLJDJP$$J = J_{\text{L}} - J_{\text{D}} - J_{\text{P}}$$J=JLJo(eq(V+JRs)ηKT1)(V+JRs)Rsh$$J = J_{\text{L}} - J_{\text{o}} \left(\right. e^{\frac{q \left(\right.…”
Section: Proposed Devicementioning
confidence: 99%