Measuring oxygen and bulk microdefects in silicon

Savin, Hele; Kissinger, G.; Airaksinen, Veli-Matti

doi:10.1016/b978-0-12-817786-0.00037-2

Handbook of Silicon Based MEMS Materials and Technologies 2020

DOI: 10.1016/b978-0-12-817786-0.00037-2

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Measuring oxygen and bulk microdefects in silicon

Hele Savin

G. Kissinger

Veli-Matti Airaksinen³

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2022

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“…The mechanism of B-defect transforming by annealing needs to be further clarified. 28,29 HCl vapor-phase etching, 30 or called "gas decoration," as a kind of highly selective dry etch, can expose nano-scale oxygen precipitates near the wafer surface. I.e.…”

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confidence: 99%

Investigation on the Transformation of B-Defect in As-Grown Czochralski Silicon Crystal during Annealing Process

Liu

Wei

et al. 2022

ECS J. Solid State Sci. Technol.

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When a silicon ingot is grown by the Czochralski method, different defects, such as A-defect (a dislocation loop or dislocation loops cluster), B-defect (widely accepted as an interstitial atoms cluster), COP (crystal originated particle, a void), and grown-in oxygen precipitates will emerge. While most crystal defects can be characterized directly, due to the extremely small size and stress, B-defects can only be indirectly characterized by the formation of oxygen precipitates. What’s more, it is unclear whether B-defects transform into oxygen precipitates directly or B-defects grow and transform into A-defects first and further facilitate oxygen precipitation via the dislocation pinning effect. Here, after implementing an optimized anneal at 900℃ for 3 hours and HCl vapor-phase etch at 900℃ for 2 min, nano-scale defects transformed from B-defects are efficiently detected by a surface particle counter. Scanning electron microscope and energy-dispersive X-ray spectroscopy results prove that these nano-scale defects are all oxygen precipitates. This explicit result indicates that B-defects can induce the formation of oxygen precipitates directly rather than relying on the formation of A-defects, which would help in understanding the characteristic of B-defect in relatively low temperature and the transformation process between different defects in silicon ingot.

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mentioning

confidence: 99%

Investigation on the Transformation of B-Defect in As-Grown Czochralski Silicon Crystal during Annealing Process

Liu

Wei

et al. 2022

ECS J. Solid State Sci. Technol.

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show abstract

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Measuring oxygen and bulk microdefects in silicon

Cited by 1 publication

References 17 publications

Investigation on the Transformation of B-Defect in As-Grown Czochralski Silicon Crystal during Annealing Process

Investigation on the Transformation of B-Defect in As-Grown Czochralski Silicon Crystal during Annealing Process

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