Measuring Sodium Migration in Mold Compounds Using a Sodium Amalgam Electrode as an Infinite Source

Schwab, Stefan; Appenroth, Julia; Bonta, Maximilian; Holzer, Sabine; Bauer, Michael; Miethaner, S.; Limbeck, Andreas; Nelhiebel, Michael; Weinberger, P.; Hutter, Herbert

doi:10.1109/ectc.2017.52

Cited by 1 publication

(3 citation statements)

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“…The conductivities observed in this study are of a similar order of magnitude as those reported by Schwab et al 25 At this point it must be stressed that such numbers inherently correspond to total conductivities. As with any measurement of currents in an external circuit there is no a priori information on the chemical nature of the charge carrier.…”

Section: Resultssupporting

confidence: 89%

“…As one aspect of electric conductivity, it is known that molding compounds can show a finite ionic conductivity. [23][24][25] The ion migration can constitute the risk that ions from the molding compound can move into the sensitive parts of the microelectronic device and influence its operation or can even destroy it.…”

mentioning

confidence: 99%

“…Recently, the sodium conductivity of mold compounds has been successfully described using a novel method, employing an amalgam electrode setup. 24,25 An alternative to this method is the CAIT technique. [30][31][32][33][34] This method employs an ion beam that is directed onto the sample surface.…”

mentioning

confidence: 99%

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Pathways for Alkali Ion Transport in Mold Compounds

Motta¹,

Schäfer²,

Noll³

et al. 2020

ECS J. Solid State Sci. Technol.

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The mobility of potassium ions in a molding compound designed for electronic device insulation has been investigated by a charge attachment induced transport (CAIT) experiment. Two different transport pathways have been identified, i.) through the bulk of the sample and ii.) along boundaries of silica grains embedded in the organic components of the molding compound. The corresponding diffusion coefficients for K+ transport are DB = 1.8 × 10−21 cm2 s−1 for the bulk and DGB = 5.4 × 10−20 cm2 s−1 for the grain boundary. The effective activation energy for charge carrier transport amounts to 1.57 eV.

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Section: Resultssupporting

confidence: 89%

mentioning

confidence: 99%