Measuring the optical density of wastewater by means of a diamond UV photodetector

Shepelev, V. A.; Altukhov, A. A.; Gladchenkov, E. V.; Попов, А. В.; Teplova, T. B.; Feshchenko, V. S.; Жуков, А. О.

doi:10.3103/s1068798x17030182

Cited by 7 publications

(2 citation statements)

References 3 publications

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“…Solar-blind photodetectors have attracted vast attention because of their all-weather operation environment and accurate detection rate in biological analysis, environmental monitoring, ultraviolet communication, solar-blind imaging, and many other fields. − To date, various ultrawide band gap semiconductors such as AlGaN, ZnMgO, diamond, Ga 2 O 3 , , etc., have been employed to fabricate solar-blind photodetectors. Among these materials, Ga 2 O 3 is a natural choice for use in solar-blind photodetectors − due to the virtues of direct bandgap of ∼4.9 eV which is in the solar-blind region.…”

Section: Introductionmentioning

confidence: 99%

Photoelectrochemical Self-Powered Solar-Blind Photodetectors Based on Ga₂O₃ Nanorod Array/Electrolyte Solid/Liquid Heterojunctions with a Large Separation Interface of Photogenerated Carriers

Chen

Wang

et al. 2019

ACS Appl. Nano Mater.

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Solar-blind photodetectors have been widely developed because of their great potential application in biological analysis, ultraviolet communication, and so on. Photodetectors constructed by vertically aligned nanorod arrays (NRAs), have attracted intensive interest recently owing to the virtues of low light reflectivity and rapid electron transport. However, limited by the insufficient contact between the upper electrode and NRAs because of uneven NRAs, photogenerated carriers cannot be effectively separated and transferred. In this work, a novel photoelectrochemical (PEC) type self-powered solar-blind photodetectors constructed in the form of Ga2O3 NRAs/electrolyte solid/liquid heterojunction with a large photogenerated carrier separation interface has been fabricated, β-Ga2O3 NRAs PEC photodetector shows a photoresponsivity of 3.81 mA/W at a bias voltage of 0 V under the 254 nm light illumination with the light intensity of 2.8 mW/cm2, thus yielding a I photo/I dark ratio of 28.97 and an external quantum efficiency of 1.86%. Our results provide a novel device structure of solar-blind photodetector with high efficient deep-ultraviolet photodetection and low power consumption.

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Section: Introductionmentioning

confidence: 99%

Photoelectrochemical Self-Powered Solar-Blind Photodetectors Based on Ga₂O₃ Nanorod Array/Electrolyte Solid/Liquid Heterojunctions with a Large Separation Interface of Photogenerated Carriers

Chen

Wang

et al. 2019

ACS Appl. Nano Mater.

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“…To meet the operational requirements of ever-growing industries such as power management, optical communications, automotive, aerospace, and defense, development of sensitive optical sensing devices gained a vast attention, where optical imaging, gas and ozone sensing, flame and combustion monitoring, and pollution control are essential [1][2][3][4][5][6]. In such applications, photodetectors (PD) are required to work at high temperatures and/or corrosive environments with high sensitivity in a wide spectrum light detection.…”

Section: Introductionmentioning

confidence: 99%

3C-SiC/Si heterostructure for self-powered multiband (UV-VIS) photodetection applications

Tamay¹,

Teker²

2022

Phys. Scr.

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This study reports a self-powered 3C-SiC/Si heterostructure photodetector in both metal-semiconductor-metal (MSM) and heterojunction (HET) configurations and capable of operating under ultraviolet and visible light (UV-VIS). The single crystalline 3C-SiC thin film was grown epitaxially on a Si (111) substrate by employing a two-step growth process. MSM configuration exhibited a peak responsivity of 0.334 A/W and a specific detectivity of 5.4 x 1011 cm.Hz1/2.W-1 (Jones) under white light illumination. However, in the UV region, photocurrent showed an increasing behavior with a decrease in the UV wavelength from 365 nm to 254 nm. The peak responsivity and specific detectivity values of the HET configuration were also determined under white light illumination with 0.167 A/W and 4.4 x 1011 Jones, respectively. Furthermore, both devices exhibited very fast rise and decay times as 3.8 ms and 3.6 ms for the MSM, and 6 ms and 8 ms for the HET configuration (fastest reported on 3C-SiC). In brief, our self-powered 3C-SiC/Si heterostructure with multiband (UV-VIS) photodetection sensitivity and fast speed could offer new solutions for the eco-friendly and sustainable optoelectronic applications.

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Ultraviolet Sensors

2022

Wide Bandgap Nanowires

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Measuring the optical density of wastewater by means of a diamond UV photodetector

Cited by 7 publications

References 3 publications

Photoelectrochemical Self-Powered Solar-Blind Photodetectors Based on Ga₂O₃ Nanorod Array/Electrolyte Solid/Liquid Heterojunctions with a Large Separation Interface of Photogenerated Carriers

Photoelectrochemical Self-Powered Solar-Blind Photodetectors Based on Ga₂O₃ Nanorod Array/Electrolyte Solid/Liquid Heterojunctions with a Large Separation Interface of Photogenerated Carriers

3C-SiC/Si heterostructure for self-powered multiband (UV-VIS) photodetection applications

Ultraviolet Sensors

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Measuring the optical density of wastewater by means of a diamond UV photodetector

Cited by 7 publications

References 3 publications

Photoelectrochemical Self-Powered Solar-Blind Photodetectors Based on Ga2O3 Nanorod Array/Electrolyte Solid/Liquid Heterojunctions with a Large Separation Interface of Photogenerated Carriers

Photoelectrochemical Self-Powered Solar-Blind Photodetectors Based on Ga2O3 Nanorod Array/Electrolyte Solid/Liquid Heterojunctions with a Large Separation Interface of Photogenerated Carriers

3C-SiC/Si heterostructure for self-powered multiband (UV-VIS) photodetection applications

Ultraviolet Sensors

Contact Info

Product

Resources

About

Photoelectrochemical Self-Powered Solar-Blind Photodetectors Based on Ga₂O₃ Nanorod Array/Electrolyte Solid/Liquid Heterojunctions with a Large Separation Interface of Photogenerated Carriers

Photoelectrochemical Self-Powered Solar-Blind Photodetectors Based on Ga₂O₃ Nanorod Array/Electrolyte Solid/Liquid Heterojunctions with a Large Separation Interface of Photogenerated Carriers