Mechanical adhesion of SiO<sub>2</sub> thin films onto polymeric substrates

Alexis, Joël; Dalverny, Olivier; Balcaen, Yannick; Dehoux, Anita; Châtel, Sébastien; Faure, B.

doi:10.1080/02670844.2018.1528689

Cited by 6 publications

(5 citation statements)

References 24 publications

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“…In poor adhesion, it would accelerate delamination and fracture, causing a device failure. In the case of good adhesion, the film remains connected to the substrate and it would slow down delamination to ensure that the mechanical and electrical integrity are intact [28]. The adhesion of the ITO films deposited on PC substrates was qualitatively characterized by cross-cut and tape peel tests (ASTMD 3359).…”

Section: The Interfacial Shear Strengthmentioning

confidence: 99%

Mechanical Properties of Tensile Cracking in Indium Tin Oxide Films on Polycarbonate Substrates

Zhou

Zhang

et al. 2022

Coatings

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The electro-mechanical behaviors of transparent conductive oxide film on polymer substrate are of great concern because they would greatly affect the stability and lifespan of the corresponding devices. In this paper, indium tin oxide (ITO) films with different thicknesses were deposited on a polycarbonate (PC) sheet; meanwhile, in situ electrical resistance, in situ scanning electron microscopy and profilometry were employed to record the electrical resistance, morphologies and residual stress in order to investigate the fracture behavior and electrical-mechanical properties of ITO films under uniaxial tension loading. The electrical resistance changes, crack initiation, crack propagation and crack density evolution of ITO films were systematically characterized by in situ tests. Three fracture stages of ITO films were summarized: Ⅰ crack initiation, Ⅱ crack propagation, Ⅲ crack saturation and delamination. The crack initiation and electrical failure in a thinner ITO film occurred at relatively higher applied tensile strain; namely, the ductility of the film decreased as the film thickness increased. Residual compressive stress was recorded in the ITO films deposited on PC at room temperature and increased as the film thickness increased. Intrinsic crack initiation strain (CIS*) showed an opposite thickness dependence to residual strain (εr); the increase in residual compressive strain was counteracted by the decrease of intrinsic cohesion, leading to an overall decrease in effective crack initiation strain (CIS) when the film thickness increased. In addition, integrated with a formulated mechanics model and the analysis of the three fracture stages under tension, the fracture toughness and interfacial shear strength were quantitatively determined. As the film thickness increased (in the range of 50~500 nm), the fracture toughness decreased and the films were more prone to crack, whereas the interfacial shear strength increased and the films were less likely to delaminate.

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Section: The Interfacial Shear Strengthmentioning

confidence: 99%

Mechanical Properties of Tensile Cracking in Indium Tin Oxide Films on Polycarbonate Substrates

Zhou

Zhang

et al. 2022

Coatings

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“…Moreover, high thermal loads on the film can lead to the formation of cracks of various shapes, such as spirals, crescent alleys and differently oriented stripes (Goehring, Nakahara, Dutta, Kitsunezaki, & Tarafdar, 2015). Many unique crack morphologies can be observed not only after thermal shock, but also after high-temperature drying (Cheng, Ma, & Ni, 2018;Ho et al, 2019).…”

Section: Introductionmentioning

confidence: 99%

The problem of crack formation in thin sublayers of silicon oxide during pulsed heating of interconnects

Скворцов¹,

Koryachko²,

Skvortsov³

et al. 2021

JART

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It is well known that in modern micro- and nanoelectronics thin-film structures are actively used as a gate dielectric, passivating layers, membranes, etc. The research is devoted to the problem of crack formation in thin sublayers of silicon oxide during pulsed heating of interconnects on single-crystal silicon wafers. The purpose of the paper is to study the effect of surface sources of thermal shock on the cracks formation in films and aspects of crack formation in SO2 films have been studied in detail. Experimental verification of the estimates made was carried out on multilayer structures of a silicon substrate-silicon oxide sublayer-aluminum film (Si-SiO2-Al). As substrates, it was used phosphorus-doped silicon single-crystal wafers oriented in the (111) direction, with a resistivity in the range p = 0.1 Ω.сm. The authors studied the temperature fields in silicon wafers (Al-Si system) and silicon oxide wafers (Al-SiO2 system) heated by a surface metallization layer both for the case of a point heat source and for the case of a long rectangular metallization path (provided that the track length significantly exceeds its width). The calculation results showed that the temperature profile of the metallization path (width 75 μm) in the transverse direction is heterogeneous. It was also shown that, in contrast to SiO2 films, the level of appearing mechanical stresses in silicon is insufficient for the formation of cracks near the source of thermal shock. This is due to a higher tensile strength than that of oxide.

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“…The E of Au was set at 79 GPa [ 48 ] and SiO 2 at 50 GPa. [ 49 ] The calculated diameter D of the RUTs as a function of the dielectric ( t d ) and metal ( t m ) thickness is presented in Figure a, which contemplates SiO 2 and Au thickness ranges of 5–40 nm and 5–25 nm, respectively, encompassing the combinations of layer thicknesses of the experimental samples in this study. The analytically calculated diameter of the RUT, based on this model, shows that the thicker layers create larger diameters.…”

Section: Self‐rolling Metamaterialsmentioning

confidence: 99%

Self‐Rolling SiO₂/Au Based Epsilon‐Near‐Zero Metamaterials

Habib

Issah

Bermúdez‐Ureña

et al. 2022

Advanced Optical Materials

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effective media with prescribed dispersion and values of the electric permittivity (ε) and magnetic permeability (μ). The advancements in dispersion engineering provide the desired material response at different frequency ranges as well as additional functionalities such as loss control or photonic doping. [3] One class of metamaterials that have highly anisotropic and hyperbolic (or indefinite) dispersion are known as hyperbolic metamaterials (HMMs), where one of the principal components of the ε tensor is opposite in sign to the other two principal components. [4] The effective material dispersion of such metamaterials can be controlled by changing the amount of metal and dielectric materials forming the structure. [5] Some of the promising applications of HMM include optical hyperlenses which demonstrate far-field optical imaging beyond the diffraction limit, [6] near-perfect absorption, [7] abnormal scattering, [8] high-sensitivity sensors, [9] and long-range energy transfer. [10] Additionally, HMMs provide an epsilon-near-zero (ENZ) feature where the real permittivity approaches zero at a certain wavelength range. The HMMs composed of alternating metal and dielectric thin layers have been demonstrated to exhibit ENZ behaviour in the designed wavelength region from visible to near-infrared [11][12][13] with the potential of ultrafast tuning of the permittivity. [14] This flexibility has extended the applications exhibited only by the naturally occurring ENZ materials to a broader range from plasmon-phonon coupling [15] and optical switching, [16] to non-resonant optical sensing [17] and the control of the localized surface plasmon resonances of nanoantennas. [18] Another way of realizing certain effective electromagnetic responses, by all means, analogous to the metamaterials, is provided by the structural dispersion properties especially by the utilization of the waveguides. Engineering of the structural dispersion -where the optical properties depend on the geometry of the structure -has been studied in various waveguide designs. [19,20] One may define an effective relative permittivity for a guided mode in a waveguide. In other words, the dispersion of propagation inside a waveguide, for the fundamental mode, is equivalent to that of propagation in a medium with effective permittivity. Both rectangular waveguides and cylindrical waveguides have been identified to exhibit different fundamental waveguide modes with a cutoff frequency where the permittivity of the media is defined as approximately zero. This Wave propagation in epsilon-near-zero (ENZ) media offers exciting possibilities in the field of nanophotonics. Here, a thin film self-rolling technique to fabricate SiO 2 /Au based 3D multilayer structures is implemented. These cylindrical multilayer metamaterials are utilized to take advantage of the material dispersion as well as the structural dispersion to obtain self-rolling ENZ metamaterials at the visible to near-infrared wavelength range. The ENZ features are investigated initially by modelling th...

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Mechanical adhesion of SiO₂ thin films onto polymeric substrates

Cited by 6 publications

References 24 publications

Mechanical Properties of Tensile Cracking in Indium Tin Oxide Films on Polycarbonate Substrates

Mechanical Properties of Tensile Cracking in Indium Tin Oxide Films on Polycarbonate Substrates

The problem of crack formation in thin sublayers of silicon oxide during pulsed heating of interconnects

Self‐Rolling SiO₂/Au Based Epsilon‐Near‐Zero Metamaterials

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Mechanical adhesion of SiO2 thin films onto polymeric substrates

Cited by 6 publications

References 24 publications

Mechanical Properties of Tensile Cracking in Indium Tin Oxide Films on Polycarbonate Substrates

Mechanical Properties of Tensile Cracking in Indium Tin Oxide Films on Polycarbonate Substrates

The problem of crack formation in thin sublayers of silicon oxide during pulsed heating of interconnects

Self‐Rolling SiO2/Au Based Epsilon‐Near‐Zero Metamaterials

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Mechanical adhesion of SiO₂ thin films onto polymeric substrates

Self‐Rolling SiO₂/Au Based Epsilon‐Near‐Zero Metamaterials