2024
DOI: 10.1016/j.mssp.2024.108160
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Mechanical and dynamical stability, electronic and bonding properties of a new narrow-gap semiconductor YPdAs Half-Heusler: DFT and QTAIM study

M. Lazab,
B. Djebour,
H. Bouafia
et al.
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Cited by 4 publications
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“…The findings based on SVR modeling are consistent with the characteristic features of electronic structure of As-based hH compounds, which were discussed in detail for NbRuAs (low effective mass and numerous valence bands). The recent interest in As-bearing hH phases [38,51,[54][55][56][57] supports this and encourage further experimental efforts in synthesis of such materials.…”
Section: Resultsmentioning
confidence: 58%
“…The findings based on SVR modeling are consistent with the characteristic features of electronic structure of As-based hH compounds, which were discussed in detail for NbRuAs (low effective mass and numerous valence bands). The recent interest in As-bearing hH phases [38,51,[54][55][56][57] supports this and encourage further experimental efforts in synthesis of such materials.…”
Section: Resultsmentioning
confidence: 58%