2021
DOI: 10.1016/j.mtla.2021.101050
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Mechanical and electronic properties of CeO2 under uniaxial tensile loading: A DFT study

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Cited by 18 publications
(12 citation statements)
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“…Uniaxially strained bulk geometry relaxations were performed with a conjugate-gradient algorithm that allowed for volume variations while imposing the structural constraints defining uniaxial strain. 12 In our simulations, uniaxial strain is defined as η = ( c − c 0 )/ c 0 , where c 0 represents the length of the strained lattice vector in the absence of any stress. Positive η values are considered tensile uniaxial strains and η < 0 compressive.…”
Section: Methodsmentioning
confidence: 99%
See 1 more Smart Citation
“…Uniaxially strained bulk geometry relaxations were performed with a conjugate-gradient algorithm that allowed for volume variations while imposing the structural constraints defining uniaxial strain. 12 In our simulations, uniaxial strain is defined as η = ( c − c 0 )/ c 0 , where c 0 represents the length of the strained lattice vector in the absence of any stress. Positive η values are considered tensile uniaxial strains and η < 0 compressive.…”
Section: Methodsmentioning
confidence: 99%
“…10 Recently, some of us have shown by means of rst-principles calculations that mechanical strains (biaxial and uniaxial) can modify the band-gap properties of transition-metal oxides in a signicant and consistent manner. 11,12 In practice, biaxial strains of 1-5% can be introduced in crystals by growing thin lms on top of substrates that present a lattice mismatch. 13,14 Similarly, uniaxial strains of comparable sizes can be realized in microstructured materials via mechanical actuation 15,16 and/or exposure to ultrasound waves.…”
mentioning
confidence: 99%
“…For integrations within the Brillouin zone (BZ) of all materials we employed Monkhorst-Pack k-point grids [43] of spacing 2π × 0.01 Å−1 . Uniaxially strained bulk geometry relaxations were performed with a conjugate-gradient algorithm that allowed for volume variations while imposing the structural constraints defining uniaxial strain [12]. In our simulations, uniaxial strain is defined as η = (c − c 0 ) /c 0 , where c 0 represents the length of the strained lattice vector in the absence of any stress.…”
Section: Methodsmentioning
confidence: 99%
“…Recently, some of us have shown by means of firstprinciples calculations that mechanical strains (biaxial and uniaxial) can modify the band-gap properties of transition-metal oxides in a significant and consistent manner [11,12]. In practice, biaxial strains of 1-5% can be introduced in crystals by growing thin films on top of substrates that present a lattice mismatch [13,14].…”
mentioning
confidence: 99%
“…Residual stresses are developed during the manufacturing process of the cells due to the thermo-elastic mismatch between the cell layers (Selçuk et al, 2001;He et al, 2011;Molla et al, 2013;Wei et al, 2018;Shang et al, 2019;Frandsen et al, 2021). These residual stresses can result in performance degradation (Li et al, 2020;Liu et al, 2021) as a result of delamination (Selçuk et al, 2001) or the formation of cracks in the cell layers (Selçuk et al, 2001;Ettler et al, 2010;Li et al, 2010) and in the extreme case may lead to the complete deterioration of the cell Zhang et al, 2008;Villanova et al, 2010).…”
Section: Introductionmentioning
confidence: 99%