Mechanical and thermal processing effects on crystal defects and thermoelectric transport properties of Bi2(Se,Te)3 compounds

Lu, Meng-Pei; Liao, Chien-Neng

doi:10.1016/j.jallcom.2013.03.190

Cited by 16 publications

(6 citation statements)

References 20 publications

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“…In addition to compositional control (Section ) and synthesis environment control (Section ), mechanical control via post‐synthesis deformation is another approach . It is well known that the p‐type Bi 2 Te 3 ingots can be inverted to n‐type simply by pressing, and the pressed n‐type material can be re‐inverted to p‐type via sintering at sufficiently high temperatures .…”

Section: Manipulation Of Intrinsic Point Defectsmentioning

confidence: 99%

New Insights into Intrinsic Point Defects in V₂VI₃ Thermoelectric Materials

et al. 2016

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Defects and defect engineering are at the core of many regimes of material research, including the field of thermoelectric study. The 60‐year history of V2VI3 thermoelectric materials is a prime example of how a class of semiconductor material, considered mature several times, can be rejuvenated by better understanding and manipulation of defects. This review aims to provide a systematic account of the underexplored intrinsic point defects in V2VI3 compounds, with regard to (i) their formation and control, and (ii) their interplay with other types of defects towards higher thermoelectric performance. We herein present a convincing case that intrinsic point defects can be actively controlled by extrinsic doping and also via compositional, mechanical, and thermal control at various stages of material synthesis. An up‐to‐date understanding of intrinsic point defects in V2VI3 compounds is summarized in a (χ, r)‐model and applied to elucidating the donor‐like effect. These new insights not only enable more innovative defect engineering in other thermoelectric materials but also, in a broad context, contribute to rational defect design in advanced functional materials at large.

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Section: Manipulation Of Intrinsic Point Defectsmentioning

confidence: 99%

New Insights into Intrinsic Point Defects in V₂VI₃ Thermoelectric Materials

et al. 2016

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“…Bi 2 Te 3 -based materials usually contain many types of defects, such as vacancies, antisite defects, dislocations, twins, secondary phases, and voids. These defects may evolve under service conditions and further affect the TE performance of Bi 2 Te 3 -based materials. , Thus, it is important to study the thermal stabilities of Bi 2 Te 3 -based materials when subjected to various thermal treatments, such as thermal annealing, thermal shock, and thermal fatigue. These processes correspond partially to the assorted and complicated service conditions.…”

Section: Thermal Stability Of Bi2te3-based Materialsmentioning

confidence: 99%

Thermal Stability and Mechanical Response of Bi₂Te₃-Based Materials for Thermoelectric Applications

Zheng

Tan

Wan

et al. 2019

ACS Appl. Energy Mater.

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Bi 2 Te 3 -based materials are among the most mature thermoelectric materials and have found wide nearroom-temperature applications in power generation and spot cooling. Their practical applications often involve complicated service conditions, such as prolonged and large temperature gradients, clamping forces, and vibrational stresses. Thus, it is important to investigate the thermal stability and mechanical response of Bi 2 Te 3 -based materials. In this review, we summarize the recent advances in the service performances of Bi 2 Te 3 -based materials. The thermal stabilities of both nand p-type Bi 2 Te 3 -based materials are discussed when exposed to repetitive thermal loading, or fixed operational temperatures in vacuum or ambient atmosphere. Then, the mechanical responses of Bi 2 Te 3 -based materials are overviewed, including the quasi-static mechanical strength, compressive fatigue, and creep behavior. Lastly, the current concerns and future development of Bi 2 Te 3 -based materials are outlined.

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“…14,15 Once the vacancy concentration is oversaturated, the excess V Te defects will be eliminated during thermal annealing due to their high mobility along basal planes and dislocation cores. 16 Among various Bi−Te-based compounds, (Bi,Sb) 2 Te 3 and Bi 2 (Se,Te) 3 are two representative P-type and N-type semiconductors used in commercial thermoelectric devices. For Bi 2 (Se,Te) 3 , Se addition would increase the probability of forming V Te defects because Se atoms tend to occupy Te (2) sites and evaporate readily due to their low evaporation energy of ∼37.7 kJ/mol.…”

Section: ■ Introductionmentioning

confidence: 99%

“…The basal gliding has a major impact on V Te defects, while the nonbasal one influences both V Te and V Bi with a concentration ratio of [V Te ]/[V Bi ] equal to 3/2 . The dislocation-mediated vacancy annihilation mechanism has been successfully adapted to explain the change of carrier concentration for the Bi–Te compounds subject to plastic deformation and postannealing. , Once the vacancy concentration is oversaturated, the excess V Te defects will be eliminated during thermal annealing due to their high mobility along basal planes and dislocation cores …”

Section: Introductionmentioning

confidence: 99%

Thermoelectric Properties of Ag-Doped Bi₂(Se,Te)₃Compounds: Dual Electronic Nature of Ag-Related Lattice Defects

Liao

Huang

et al. 2015

Inorg. Chem.

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Effects of Ag doping and thermal annealing temperature on thermoelectric transport properties of Bi2(Se,Te)3 compounds are investigated. On the basis of the comprehensive analysis of carrier concentration, Hall mobility, and lattice parameter, we identified two Ag-related interstitial (Agi) and substitutional (AgBi) defects that modulate in different ways the thermoelectric properties of Ag-doped Bi2(Se,Te)3 compounds. When Ag content is less than 0.5 wt %, Agi plays an important role in stabilizing crystal structure and suppressing the formation of donor-like Te vacancy (VTe) defects, leading to the decrease in carrier concentration with increasing Ag content. For the heavily doped Bi2(Se,Te)3 compounds (>0.5 wt % Ag), the increasing concentration of AgBi is held responsible for the increase of electron concentration because formation of AgBi defects is accompanied by annihilation of hole carriers. The analysis of Seebeck coefficients and temperature-dependent electrical properties suggests that electrons in Ag-doped Bi2(Se,Te)3 compounds are subject to a mixed mode of impurity scattering and lattice scattering. A 10% enhancement of thermoelectric figure-of-merit at room temperature was achieved for 1 wt % Ag-doped Bi2(Se,Te)3 as compared to pristine Bi2(Se,Te)3.

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Mechanical and thermal processing effects on crystal defects and thermoelectric transport properties of Bi2(Se,Te)3 compounds

Cited by 16 publications

References 20 publications

New Insights into Intrinsic Point Defects in V₂VI₃ Thermoelectric Materials

New Insights into Intrinsic Point Defects in V₂VI₃ Thermoelectric Materials

Thermal Stability and Mechanical Response of Bi₂Te₃-Based Materials for Thermoelectric Applications

Thermoelectric Properties of Ag-Doped Bi₂(Se,Te)₃Compounds: Dual Electronic Nature of Ag-Related Lattice Defects

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Mechanical and thermal processing effects on crystal defects and thermoelectric transport properties of Bi2(Se,Te)3 compounds

Cited by 16 publications

References 20 publications

New Insights into Intrinsic Point Defects in V2VI3 Thermoelectric Materials

New Insights into Intrinsic Point Defects in V2VI3 Thermoelectric Materials

Thermal Stability and Mechanical Response of Bi2Te3-Based Materials for Thermoelectric Applications

Thermoelectric Properties of Ag-Doped Bi2(Se,Te)3Compounds: Dual Electronic Nature of Ag-Related Lattice Defects

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Product

Resources

About

New Insights into Intrinsic Point Defects in V₂VI₃ Thermoelectric Materials

New Insights into Intrinsic Point Defects in V₂VI₃ Thermoelectric Materials

Thermal Stability and Mechanical Response of Bi₂Te₃-Based Materials for Thermoelectric Applications

Thermoelectric Properties of Ag-Doped Bi₂(Se,Te)₃Compounds: Dual Electronic Nature of Ag-Related Lattice Defects